Manufacturer Part NumberCSD25213W10
Manufacturer / BrandTexas Instruments
Available Quantity83140 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET P-CH 20V 1.6A 4DSBGA
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download CSD25213W10.pdf

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Part Number
CSD25213W10
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
47 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.9nC @ 4.5V
Vgs (Max)
-6V
Input Capacitance (Ciss) (Max) @ Vds
478pF @ 10V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-DSBGA (1x1)
Package / Case
4-UFBGA, DSBGA
Weight
Contact us
Application
Email for details
Replacement Part
CSD25213W10

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