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Infineon Technologies |
IC GATE DRVR HI/LOW SIDE 10DFN |
Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | 0.8V, 1V | 3A, 4A | Non-Inverting | 35V | 21ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Infineon Technologies |
IC MOSFET GATE DRIVER 10DFN |
Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | - | 3A, 4A | Non-Inverting | - | - | 0°C ~ 125°C (TJ) | Surface Mount | 10-VDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8-SOIC |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 3.7V, 7.4V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8-SOIC |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 3.7V, 7.4V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 12-DFN |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 3.7V, 7.4V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8-SOIC |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8-SOIC |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 12-DFN |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 12-DFN |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 10TDFN |
Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |