Toshiba Semiconductor and Storage Distributor - Transistores - Bipolar (BJT) - Único, Pré-tendencioso - RN1109MFV,L3F RN2104MFV,L3F - CHIPSIC

Número da peça	Fabricante / Marca	Descrição breve	Status da Parte	Tipo de transistor	Current - Collector (Ic) (Max)	Voltagem - Coletor Emissor Disrupção (Máx.)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequência - Transição	Power - Max	Tipo de montagem	Pacote / Caso	Pacote de dispositivos de fornecedores
RN1109MFV,L3F	Toshiba Semiconductor and Storage	TRANSISTOR PREBIAS NPN 50V 500NA VESM	Active	NPN - Pre-Biased	100mA	50V	47 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN2104MFV,L3F	Toshiba Semiconductor and Storage	TRANSISTOR PREBIAS PNP 50V 500NA VESM	Active	PNP - Pre-Biased	100mA	50V	47 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN2103MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	Active	PNP - Pre-Biased	100mA	50V	22 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN2105MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	Active	PNP - Pre-Biased	100mA	50V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM