Part Number Manufacturer / Brand Brife Description Part StatusDriven ConfigurationChannel TypeNumber of DriversGate TypeVoltage - SupplyLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)Input TypeHigh Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Operating TemperatureMounting TypePackage / CaseSupplier Device Package
Infineon Technologies IC GATE DRVR HI/LOW SIDE 10DFN ActiveHalf-BridgeSynchronous2N-Channel MOSFET10.8 V ~ 13.2 V0.8V, 1V3A, 4ANon-Inverting35V21ns, 18ns0°C ~ 125°C (TJ)Surface Mount10-VFDFN Exposed Pad10-DFN (3x3)
Infineon Technologies IC MOSFET GATE DRIVER 10DFN ActiveHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 13.2 V
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3A, 4ANon-Inverting
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0°C ~ 125°C (TJ)Surface Mount10-VDFN Exposed Pad10-DFN (3x3)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 8-SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V3.7V, 7.4V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 8-SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V3.7V, 7.4V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 12-DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V3.7V, 7.4V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 8-SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 8-SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 12-DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 12-DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 10TDFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount10-WDFN Exposed Pad10-TDFN (4x4)