Part Number Manufacturer / Brand Brife Description Part StatusDriven ConfigurationChannel TypeNumber of DriversGate TypeVoltage - SupplyLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)Input TypeHigh Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Operating TemperatureMounting TypePackage / CaseSupplier Device Package
Renesas Electronics America Inc. IC HALF BRIDGE FET DRIVER 10TDFN ObsoleteHalf-BridgeSynchronous2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V2A, 2AInverting114V10ns, 10ns-55°C ~ 150°C (TJ)Surface Mount10-WDFN Exposed Pad10-TDFN (4x4)
Renesas Electronics America Inc. IC DVR HALF-BRDG HF 100V 2A 9DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET9 V ~ 14 V1.4V, 2.2V2A, 2ANon-Inverting114V10ns, 10ns-40°C ~ 125°C (TJ)Surface Mount9-VFDFN Exposed Pad9-DFN-EP (3x3)
Renesas Electronics America Inc. IC DVR HALF-BRDG HF 100V 2A 9DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET9 V ~ 14 V1.4V, 2.2V2A, 2ANon-Inverting114V10ns, 10ns-40°C ~ 125°C (TJ)Surface Mount9-VFDFN Exposed Pad9-DFN-EP (3x3)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 8-SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 8-SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 12-DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 12-DFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
Renesas Electronics America Inc. IC MSFT DVR HALF-BRG 100V 10TDFN ActiveHalf-BridgeIndependent2N-Channel MOSFET8 V ~ 14 V1.4V, 2.2V3A, 4ANon-Inverting114V9ns, 7.5ns-40°C ~ 125°C (TJ)Surface Mount10-WDFN Exposed Pad10-TDFN (4x4)
Renesas Electronics America Inc. IC DRVR H-BRDG 100V 1.25A 8SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET9 V ~ 14 V1.4V, 2.2V1.25A, 1.25ANon-Inverting100V16ns, 16ns-40°C ~ 125°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC