Part Number Manufacturer / Brand Brife Description Part StatusDriven ConfigurationChannel TypeNumber of DriversGate TypeVoltage - SupplyLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)Input TypeHigh Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Operating TemperatureMounting TypePackage / CaseSupplier Device Package
Infineon Technologies IC GATE DRIVE AUTOMOTIVE 28SOIC ObsoleteHalf-Bridge3-Phase6N-Channel MOSFET24 V ~ 150 V0.7V, 2.5V200mA, 350mANon-Inverting200V100ns, 35ns-40°C ~ 125°C (TJ)Surface Mount28-SOIC (0.295", 7.50mm Width)28-SOIC
Infineon Technologies IC DVR HIGH/LOW SIDE 14-SOIC ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HALF-BRIDGE 14-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mAInverting, Non-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC DRIVER HALF-BRIDGE 14-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mAInverting, Non-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC DRIVER HALF-BRIDGE 14-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mAInverting, Non-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC DRIVER HALF-BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mAInverting, Non-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC HALF BRIDGE DRIVER 8-SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HALF BRIDGE 8-SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DVR HALF BRIDGE 14-DIP ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC HALF BRIDGE DRIVER 14-SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC DVR HALF BRIDGE 14-SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC HALF BRIDGE DRIVER 8-SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DVR HALF BRIDGE 8-SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HALF-BRIDGE 600V 8SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DVR HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V290mA, 600mANon-Inverting600V100ns, 35ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC