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Infineon Technologies |
IC MOSFET DRIVER |
Active | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.5V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8DFN |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8DIP |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DFN |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL IN/NON 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DIFF 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 DFN DUAL INVERTING |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
DUAL LOW SIDE MOSFET DRIVER |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 LEAD SOIC DUAL NON INVERTIN |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8DIP |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 8 PIN DIP NON INVERTING |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 5LEAD TO-263 NON INVERTING |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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Linear Technology/Analog Devices |
IC MOSFET DRVR 1/2BRDG NCH16SOIC |
Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 30 V | 0.8V, 2V | 500mA, 500mA | Inverting, Non-Inverting | 56V | 130ns, 120ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRVR 1/2BRDG NCH16SOIC |
Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 30 V | 0.8V, 2V | 500mA, 500mA | Inverting, Non-Inverting | 56V | 130ns, 120ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER N-CH QUAD20SOIC |
Active | High-Side | Independent | 4 | N-Channel MOSFET | 8 V ~ 48 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER NCH QUAD 20SOIC |
Active | High-Side | Independent | 4 | N-Channel MOSFET | 8 V ~ 48 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Linear Technology/Analog Devices |
IC POWER MOSFET DRIVER NCH 24SOIC |
Active | Half-Bridge | Independent | 4 | N-Channel MOSFET | 10 V ~ 15 V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | 60V | 130ns, 60ns | 0°C ~ 125°C (TJ) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
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Linear Technology/Analog Devices |
IC POWER MOSFET DRIVER NCH 24SOIC |
Active | Half-Bridge | Independent | 4 | N-Channel MOSFET | 10 V ~ 15 V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | 60V | 130ns, 60ns | 0°C ~ 125°C (TJ) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HIGH-SIDE 8SOIC |
Active | High-Side | Single | 1 | N-Channel MOSFET | 8 V ~ 48 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 85°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HIGH-SIDE 8SOIC |
Active | High-Side | Single | 1 | N-Channel MOSFET | 8 V ~ 48 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 85°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HI-SIDE 8-SOIC |
Active | High-Side | Single | 1 | N-Channel MOSFET | 8 V ~ 48 V | 0.7V, 3.5V | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HI-SIDE 8-SOIC |
Active | High-Side | Single | 1 | N-Channel MOSFET | 8 V ~ 48 V | 0.7V, 3.5V | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HIGH-SIDE 8-DIP |
Active | High-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HIGH-SIDE 8SOIC |
Active | High-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER HIGH-SIDE 8SOIC |
Active | High-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER 3.3V DUAL 8SOIC |
Active | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 3.3 V ~ 5 V | - | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC HI-SIDE SW CNTRLR DUAL 8-SOIC |
Active | High-Side | Synchronous | 2 | N-Channel MOSFET | 2.7 V ~ 5.5 V | 0.6V, 1.4V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DVR N-CH DUAL 8-SOIC |
Active | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 1.7V, 2.2V | 1.5A, 1.5A | Non-Inverting | - | 16ns, 16ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DVR N-CH DUAL 8-SOIC |
Active | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 1.7V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 16ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC HI-SIDE SW CTRL SNGL TSOT23-5 |
Active | High-Side | Single | 1 | N-Channel MOSFET | 1.8 V ~ 5.5 V | 0.6V, 1.4V | - | Inverting | - | - | -40°C ~ 85°C (TA) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSOT-23-5 |
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Microchip Technology |
IC MOSFET DRIVER 6A INV 8CDIP |
Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -55°C ~ 150°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
