Memory - Integrated Circuits (ICs) - GD25Q127CSJGR GD5F1GQ4RF9IGY GD5F1GQ4UEYIGY GD5F1GQ4UFYIGY - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Memory Type	Memory Format	Technology	Memory Size	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Memory Interface	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GD25Q127CSJGR	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	104MHz	12µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
GD5F1GQ4RF9IGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	1Gb (128M x 8)	120MHz	700µs	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WLGA Exposed Pad	8-LGA (6x8)
GD5F1GQ4UEYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	1Gb (128M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F1GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	1Gb (128M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F1GQ4UEYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	1Gb (128M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD9FS1G8F2AMGI	GigaDevice Semiconductor (HK) Limited	SLC NAND FLASH	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MB85RS256APNF-G-JNE1	Fujitsu Electronics America, Inc.	IC FRAM 256K SPI 25MHZ 8SOP	Not For New Designs	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	25MHz	-	-	SPI	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
GD25Q256DBIGY	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	256Mb (32M x 8)	104MHz	50µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
MB85RS128BPNF-G-JNE1	Fujitsu Electronics America, Inc.	IC FRAM 128K SPI 33MHZ 8SOP	Discontinued at -	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	128Kb (16K x 8)	33MHz	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
GD5F2GQ4RF9IGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WLGA Exposed Pad	8-LGA (6x8)
GD5F2GQ4UEYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F2GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F2GQ4UEYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MB85R256FPNF-G-JNERE2	Fujitsu Electronics America, Inc.	IC FRAM 256K PARALLEL 28SOP	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	-	150ns	150ns	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOP
MB85R256FPFCN-G-BNDE1	Fujitsu Electronics America, Inc.	IC FRAM 256K PARALLEL 28TSOP I	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	-	150ns	150ns	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
GD25S512MDBIGY	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	512Mb (64M x 8)	104MHz	50µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
MB85RS2MTPF-G-JNERE2	Fujitsu Electronics America, Inc.	IC FRAM 2M SPI 25MHZ 8SOP	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	2Mb (256K x 8)	25MHz	-	-	SPI	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
LHF00L14	Sharp Microelectronics	IC FLASH 32M PARALLEL 48TSOP	Obsolete	Non-Volatile	FLASH	FLASH	32Mb (2M x 16)	-	90ns	90ns	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MB85RS2MTPH-G-JNE1	Fujitsu Electronics America, Inc.	IC FRAM 2M SPI 25MHZ 8DIP	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	2Mb (256K x 8)	25MHz	-	-	SPI	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
GD5F4GQ4RBYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RCYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UBYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UCYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RBYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RCYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UBYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UCYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MB85R1002ANC-GE1	Fujitsu Electronics America, Inc.	IC FRAM 1M PARALLEL 48TSOP	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	1Mb (64K x 16)	-	150ns	150ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
MB85R4001ANC-GE1	Fujitsu Electronics America, Inc.	IC FRAM 4M PARALLEL 48TSOP	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	4Mb (512K x 8)	-	150ns	150ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
MB85R4002ANC-GE1	Fujitsu Electronics America, Inc.	IC FRAM 4M PARALLEL 48TSOP	Active	Non-Volatile	FRAM	FRAM (Ferroelectric RAM)	4Mb (256K x 16)	-	150ns	150ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
S25FL128LAGMFB000	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 16SOIC	Preliminary	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	-	-	SPI - Quad I/O, QPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
NDS36PT5-16ET	Insignis Technology Corporation	IC SDRAM 256MBIT 167MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	256Mb (16M x 16)	166MHz	12ns	-	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDS36PT5-20ET	Insignis Technology Corporation	IC SDRAM 256MBIT 200MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	256Mb (16M x 16)	200MHz	10ns	4.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDS63PT9-16IT	Insignis Technology Corporation	IC SDRAM 64MBIT 167MHZ 86TSOP	Active	Volatile	DRAM	SDRAM	64Mb (2M x 32)	166MHz	-	-	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
NDS66PT5-16IT	Insignis Technology Corporation	IC SDRAM 64MBIT 166MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	64Mb (4M x 16)	166MHz	-	-	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDS76PT5-16IT	Insignis Technology Corporation	IC SDRAM 128MBIT 166MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	128Mb (8M x 16)	166MHz	12ns	-	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDS76PT5-20IT	Insignis Technology Corporation	IC SDRAM 128MBIT 200MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	128Mb (8M x 16)	200MHz	10ns	4.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDD36PT6-2AIT	Insignis Technology Corporation	IC SDRAM 256MBIT 200MHZ 66TSOP	Active	Volatile	DRAM	SDRAM - DDR	256Mb (16M x 16)	200MHz	15ns	700ps	Parallel	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
NDD56PT6-2AIT	Insignis Technology Corporation	IC SDRAM 512MBIT 200MHZ 66TSOP	Active	Volatile	DRAM	SDRAM - DDR	512Mb (32M x 16)	200MHz	15ns	700ps	Parallel	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
NDS36PT5-16IT	Insignis Technology Corporation	IC SDRAM 256MBIT 166MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	256Mb (16M x 16)	166MHz	12ns	-	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS66WVE4M16EBLL-55BLI	ISSI, Integrated Silicon Solution Inc	IC PSRAM 64M PARALLEL 48TFBGA	Active	Volatile	PSRAM	PSRAM (Pseudo SRAM)	64Mb (4M x 16)	-	55ns	55ns	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
NDS66PT5-16ET	Insignis Technology Corporation	IC SDRAM 64MBIT 166MHZ 54TSOP	Active	Volatile	DRAM	SDRAM	64Mb (4M x 16)	166MHz	-	-	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
NDS96PT4-16IT	Insignis Technology Corporation	IC SDRAM 16MBIT 143MHZ 50TSOP	Active	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	-	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
MT46H64M16LFBF-5 IT:B	Micron Technology Inc.	IC DRAM 1G PARALLEL 60VFBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR	1Gb (64M x 16)	200MHz	15ns	5.0ns	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT29F2G08ABAEAWP:E TR	Micron Technology Inc.	IC FLASH 2G PARALLEL 48TSOP I	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F2G08ABAEAWP-IT:E TR	Micron Technology Inc.	IC FLASH 2G PARALLEL 48TSOP I	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F1G08ABADAH4-IT:D	Micron Technology Inc.	IC FLASH 1G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1Gb (128M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F4G08ABADAH4-IT:D	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F8G08ADADAH4-IT:D	Micron Technology Inc.	IC FLASH 8G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (1G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT46V16M16CY-5B IT:M	Micron Technology Inc.	IC DRAM 256M PARALLEL 60FBGA	Active	Volatile	DRAM	SDRAM - DDR	256Mb (16M x 16)	200MHz	15ns	700ps	Parallel	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)

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