Part Number Manufacturer / Brand Brife Description Part StatusMemory TypeMemory FormatTechnologyMemory SizeClock FrequencyWrite Cycle Time - Word, PageAccess TimeMemory InterfaceVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Micron Technology Inc. IC DRAM 4G PARALLEL 96FBGA ActiveVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)933MHz
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20nsParallel1.283 V ~ 1.45 V-40°C ~ 105°C (TC)Surface Mount96-TFBGA96-FBGA (8x14)
Micron Technology Inc. IC DRAM 4G PARALLEL 96FBGA ActiveVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)933MHz
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20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)Surface Mount96-TFBGA96-FBGA (8x14)
Micron Technology Inc. IC DRAM 4G PARALLEL 933MHZ ActiveVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)933MHz
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20nsParallel1.283 V ~ 1.45 V-40°C ~ 125°C (TC)
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Micron Technology Inc. IC DRAM 4G PARALLEL 933MHZ ObsoleteVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)933MHz
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20nsParallel1.283 V ~ 1.45 V0°C ~ 95°C (TC)
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Micron Technology Inc. IC DRAM 4G PARALLEL 96FBGA ActiveVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)933MHz
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20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)Surface Mount96-TFBGA96-FBGA (8x14)
Micron Technology Inc. IC DRAM 4G PARALLEL 96FBGA ActiveVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)933MHz
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20nsParallel1.283 V ~ 1.45 V0°C ~ 95°C (TC)Surface Mount96-TFBGA96-FBGA (8x14)
Micron Technology Inc. IC DRAM 4G PARALLEL 800MHZ ObsoleteVolatileDRAMSDRAM - DDR3L4Gb (256M x 16)800MHz
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20nsParallel1.283 V ~ 1.45 V0°C ~ 95°C (TC)
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