Part Number Manufacturer / Brand Brife Description Part StatusMemory TypeMemory FormatTechnologyMemory SizeClock FrequencyWrite Cycle Time - Word, PageAccess TimeMemory InterfaceVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
10nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
10nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 1067MHZ ActiveVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 1067MHZ ActiveVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 1067MHZ ActiveVolatileDRAMDRAM576Mb (16M x 36)1067MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)933MHz
-
10nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 933MHZ ObsoleteVolatileDRAMDRAM576Mb (16M x 36)933MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)933MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 933MHZ ActiveVolatileDRAMDRAM576Mb (16M x 36)933MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)800MHz
-
12nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)800MHz
-
10nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (16M x 36)800MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)1067MHz
-
10nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)1067MHz
-
10nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)1067MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)1067MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 1067MHZ ActiveVolatileDRAMDRAM576Mb (32M x 18)1067MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 1067MHZ ObsoleteVolatileDRAMDRAM576Mb (32M x 18)1067MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)933MHz
-
10nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 933MHZ ActiveVolatileDRAMDRAM576Mb (32M x 18)933MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)933MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 933MHZ ActiveVolatileDRAMDRAM576Mb (32M x 18)933MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)800MHz
-
12nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ActiveVolatileDRAMDRAM576Mb (32M x 18)800MHz
-
10nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)800MHz
-
10nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 576M PARALLEL 168BGA ObsoleteVolatileDRAMDRAM576Mb (32M x 18)800MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)Surface Mount168-TBGA168-BGA
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ObsoleteVolatileDRAMDRAM1.125Gb (32Mb x 36)1200MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ActiveVolatileDRAMDRAM1.125Gb (32Mb x 36)1200MHz
-
6.67nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1067MHZ ActiveVolatileDRAMDRAM1.125Gb (32Mb x 36)1067MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1067MHZ ObsoleteVolatileDRAMDRAM1.125Gb (32Mb x 36)1067MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 933MHZ ActiveVolatileDRAMDRAM1.125Gb (32Mb x 36)933MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 933MHZ ActiveVolatileDRAMDRAM1.125Gb (32Mb x 36)933MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ObsoleteVolatileDRAMDRAM1.125Gb (64Mb x 18)1200MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ActiveVolatileDRAMDRAM1.125Gb (64Mb x 18)1200MHz
-
6.67nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1067MHZ ActiveVolatileDRAMDRAM1.125Gb (64Mb x 18)1067MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. RLDRAM 3 1.125G 64MX18 TBGA ObsoleteVolatileDRAMDRAM1.125Gb (64Mb x 18)1067MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 933MHZ ActiveVolatileDRAMDRAM1.125Gb (64Mb x 18)933MHz
-
8nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-