Part Number Manufacturer / Brand Brife Description Part StatusSwitch CircuitMultiplexer/Demultiplexer CircuitNumber of CircuitsOn-State Resistance (Max)Channel-to-Channel Matching (ΔRon)Voltage - Supply, Single (V+)Voltage - Supply, Dual (V±)Switch Time (Ton, Toff) (Max)-3db BandwidthCharge InjectionChannel Capacitance (CS(off), CD(off))Current - Leakage (IS(off)) (Max)CrosstalkOperating TemperaturePackage / CaseSupplier Device Package
Renesas Electronics America Inc. IC SWITCH SPDT 6UTDFN ActiveSPDT2:11860 mOhm (Typ)4 mOhm1.8 V ~ 5.5 V
-
24ns, 10ns190MHz26pC16pF10nA-83dB @ 100kHz-40°C ~ 85°C (TA)6-UFDFN6-UTDFN (1.2x1.0)
Maxim Integrated IC SWITCH ANALOG 8TDFN Discontinued at -SPST - NO1:111 Ohm2.4 mOhm3 V ~ 5.5 V
-
300µs, 1ns100MHz1370pC
-
250nA-83dB @ 100kHz-40°C ~ 85°C (TA)8-WDFN Exposed Pad8-TDFN (3x3)
Maxim Integrated IC SWITCH SPST 1 OHM 8TDFN ActiveSPST - NO1:111 Ohm2.4 mOhm3 V ~ 5.5 V
-
300µs, 1ns100MHz1370pC
-
250nA-83dB @ 100kHz-40°C ~ 85°C (TA)8-WDFN Exposed Pad8-TDFN (3x3)
ON Semiconductor IC SWITCH DUAL SPDT 10MICROBUMP ActiveSPDT2:12800 mOhm60 mOhm1.8 V ~ 5.5 V
-
30ns, 30ns9.5MHz15pC102pF, 104pF1µA-83dB @ 100kHz-55°C ~ 125°C (TA)10-UFBGA, FCBGA10-Microbump (1.97x1.47)
ON Semiconductor IC SWITCH DUAL SPDT 10MICROBUMP ActiveSPDT2:12800 mOhm60 mOhm1.8 V ~ 5.5 V
-
30ns, 30ns9.5MHz15pC102pF, 104pF1µA-83dB @ 100kHz-55°C ~ 125°C (TA)10-UFBGA, FCBGA10-Microbump (1.97x1.47)
ON Semiconductor IC SWITCH DUAL SPDT 10DFN ObsoleteSPDT2:12800 mOhm60 mOhm1.8 V ~ 5.5 V
-
30ns, 30ns9.5MHz15pC102pF, 104pF1µA-83dB @ 100kHz-55°C ~ 125°C (TA)10-VFDFN Exposed Pad10-DFN (3x3)
ON Semiconductor IC SWITCH DUAL SPDT 10DFN ActiveSPDT2:12800 mOhm60 mOhm1.8 V ~ 5.5 V
-
30ns, 30ns9.5MHz15pC102pF, 104pF1µA-83dB @ 100kHz-55°C ~ 125°C (TA)10-VFDFN Exposed Pad10-DFN (3x3)
ON Semiconductor IC SWITCH DUAL SPDT MICRO10 ActiveSPDT2:12800 mOhm60 mOhm1.8 V ~ 5.5 V
-
30ns, 30ns9.5MHz15pC102pF, 104pF1µA-83dB @ 100kHz-55°C ~ 125°C (TA)10-TFSOP, 10-MSOP (0.118", 3.00mm Width)10-Micro