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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AA |
Active | Schottky | 90V | 1.5A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AA |
Active | Schottky | 90V | 1.5A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO214AA |
Active | Standard | 300V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
Active | Standard | 400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO214AA |
Active | Standard | 50V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
Active | Standard | 100V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
Active | Standard | 150V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
Active | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO214AA |
Active | Standard | 300V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 50V DO-214AB |
Active | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 60V DO-214AB |
Active | Schottky | 60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 50V DO-214AB |
Active | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 60V DO-214AB |
Active | Schottky | 60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO221AC |
Active | Standard | 100V | 3A | 930mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 2µA @ 100V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 2A DO214AC |
Active | Avalanche | 50V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A DO214AC |
Active | Avalanche | 100V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
Active | Avalanche | 200V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
Active | Standard | 50V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
Active | Standard | 100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
Active | Standard | 150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
Active | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
Active | Standard | 50V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
Active | Standard | 100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
Active | Standard | 150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
Active | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V DO-214AB |
Active | Schottky | 200V | 5A (DC) | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 200V | 280pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V DO-214AB |
Active | Schottky | 200V | 5A (DC) | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 200V | 280pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3.5A DO201AD |
Active | Standard | 150V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3.5A DO201AD |
Active | Standard | 200V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3.5A DO201AD |
Active | Standard | 50V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD |
Active | Standard | 50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD |
Active | Standard | 100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
Active | Standard | 150V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
Active | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.5A DO201AD |
Active | Standard | 100V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3.5A DO201AD |
Active | Standard | 150V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3.5A DO201AD |
Active | Standard | 50V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD |
Active | Standard | 50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD |
Active | Standard | 100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
Active | Standard | 150V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO214AB |
Active | Standard | 50V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 50V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO214AB |
Active | Standard | 100V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO214AB |
Active | Standard | 200V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 5A DO214AB |
Active | Standard | 800V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 5A DO214AB |
Active | Standard | 1000V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
Active | Standard | 100V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
Active | Standard | 200V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
Active | Standard | 400V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 4A TO277A |
Active | Standard | 800V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 4A TO277A |
Active | Standard | 1000V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |