Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - S1MBHM4G S2AHM4G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S1MBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	Active	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2AHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2BHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2DHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2GHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2JHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS1GL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	Active	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2AHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2BHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2DHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2GHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2JHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS1GL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF21G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF22G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	Active	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF23G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF25G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF27G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 2A DO204AC	Active	Standard	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR215HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO204AC	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF22G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	Active	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF23G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF24G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF25G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF26G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF27G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 2A DO204AC	Active	Standard	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF28G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR215HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO204AC	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
RS2GAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2JAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	Active	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2KAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC	Active	Standard	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2MAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO214AC	Active	Standard	-	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS19LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF11GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR010HR1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 500MA DO204	Active	Schottky	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1JHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS1ML RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A SUB SMA	Active	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF2L8G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single