Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SS15HR3G SS16HR3G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS15HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	Active	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS16HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	Active	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
B0520LWF RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 500MA SOD123F	Active	Schottky	20V	500mA	385mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 20V	-	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 125°C
B0530WF RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 500MA SOD123F	Active	Schottky	30V	500mA	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	-	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 125°C
B0540WF RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 500MA SOD123F	Active	Schottky	40V	500mA	510mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	-	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
2A01GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A01GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A04G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	Active	Standard	400V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A05G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
F1T2G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
RB520G-30 RLG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 100MA SOD723	Active	Schottky	30V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 10V	-	Surface Mount	SOD-723	SOD-723	125°C (Max)
RS1AHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1BHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1DHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1GHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1JHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1AL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	Active	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	Active	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1ML RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800MA SUB SMA	Active	Standard	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR002 R1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 500MA DO204AL	Active	Schottky	20V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR003 R1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 500MA DO204AL	Active	Schottky	30V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR004 R1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 500MA DO204AL	Active	Schottky	40V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR109HR1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	Active	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR110HR1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO204AL	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR115HR1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO204AL	Active	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS1AL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	Active	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	Active	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	Active	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	Active	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1KL RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	Active	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1ML RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800MA SUB SMA	Active	Standard	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
2A02GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	Active	Standard	100V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A03GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
F1T1GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
RS1AL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	Active	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1AL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	Active	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	Active	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	Active	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	Active	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	Active	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	Active	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	Active	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	Active	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1KL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	Active	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1KL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	Active	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single