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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 20A TO220AC |
Active | Schottky | 150V | 20A | 1.02V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A TO247AD |
Active | Standard | 150V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 20A TO247AD |
Active | Standard | 50V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A TO247AD |
Active | Standard | 100V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 16A ITO220AC |
Active | Standard | 50V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 130pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 16A TO247AD |
Active | Standard | 50V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 16A TO247AD |
Active | Standard | 100V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 16A TO247AD |
Active | Standard | 150V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A TO247AD |
Active | Standard | 200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 16A TO247AD |
Active | Standard | 300V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO247AD |
Active | Standard | 400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 16A TO247AD |
Active | Standard | 500V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A TO247AD |
Active | Standard | 600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 16A TO263AB |
Active | Standard | 50V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 16A TO263AB |
Active | Standard | 100V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 16A TO263AB |
Active | Standard | 150V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A TO263AB |
Active | Standard | 200V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A TO247AD |
Active | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A TO247AD |
Active | Standard | 300V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 20A TO220AC |
Active | Schottky | 100V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 16A TO263AB |
Active | Standard | 300V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO263AB |
Active | Standard | 400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A TO247AD |
Active | Standard | 150V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A TO247AD |
Active | Standard | 400V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A TO247AD |
Active | Standard | 500V | 20A | 1.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 20A TO220AC |
Active | Schottky | 150V | 20A | 1.02V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A ITO220AB |
Active | Schottky | 100V | 10A | 790mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A TO247AD |
Active | Standard | 600V | 20A | 1.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A TO247AD |
Active | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A TO247AD |
Active | Standard | 300V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 10A ITO220AB |
Active | Schottky | 120V | 10A | 860mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 120V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A TO247AD |
Active | Standard | 400V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A TO247AD |
Active | Standard | 500V | 20A | 1.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 10A ITO220AB |
Active | Schottky | 150V | 10A | 920mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A TO247AD |
Active | Standard | 600V | 20A | 1.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY STANDARD 10A |
Active | Schottky | 200V | 10A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY STANDARD 10A |
Active | Schottky | 200V | 10A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 15A TO220AC |
Active | Standard | - | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 30A TO247AD |
Active | Standard | 50V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 30A TO247AD |
Active | Standard | 100V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 30A TO247AD |
Active | Standard | 150V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 30A TO247AD |
Active | Standard | 300V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 30A TO247AD |
Active | Standard | 400V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 15A TO220AC |
Active | Standard | - | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 30A TO247AD |
Active | Standard | 50V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 30A TO247AD |
Active | Standard | 100V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 30A TO247AD |
Active | Standard | 150V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 30A TO247AD |
Active | Standard | 200V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 30A TO247AD |
Active | Standard | 300V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 30A TO247AD |
Active | Standard | 400V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |