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Microsemi Corporation |
DIODE GEN PURPOSE |
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Microsemi Corporation |
DIODE GEN PURPOSE |
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Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA |
Active | Standard, Reverse Polarity | 800V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA |
Active | Standard, Reverse Polarity | 1000V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 1A AXIAL |
Active | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL |
Active | Standard | 600V | 3A | 1.5V @ 9A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 600V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1.4KV 250MA AXIAL |
Active | Standard | 1400V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1400V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GP 1.75KV 250MA AXIAL |
Active | Standard | 1750V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1750V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 660V 1.75A AXIAL |
Active | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 850MA AXIAL |
Active | Standard | 100V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 850MA AXIAL |
Active | Standard | 150V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 850MA AXIAL |
Active | Standard | 50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
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Microsemi Corporation |
DIODE GEN PURP 440V 2A AXIAL |
Active | Standard | 440V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 880V 1A AXIAL |
Active | Standard | 880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 990V 1A AXIAL |
Active | Standard | 990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 220V 1.75A AXIAL |
Active | Standard | 220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 440V 1.75A AXIAL |
Active | Standard | 440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE RECT ULT FAST REC A-PKG |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 600V 5A AXIAL |
Active | Standard | 600V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 3A AXIAL |
Active | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 65pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL |
Active | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 65pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 3A AXIAL |
Active | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 65pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A D5A |
Active | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO41 |
Active | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Microsemi Corporation |
STANDARD RECTIFIER |
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Microsemi Corporation |
STANDARD RECTIFIER |
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Microsemi Corporation |
STANDARD RECTIFIER |
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Microsemi Corporation |
STANDARD RECTIFIER |
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Microsemi Corporation |
STANDARD RECTIFIER |
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Microsemi Corporation |
STANDARD RECTIFIER |
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Microsemi Corporation |
DIODE SWITCHING 600V 22A 2-PIN D |
Active | - | 600V | - | 1.2V @ 30A | - | - | - | - | - | - | - | -65°C ~ 200°C |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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Microsemi Corporation |
RECTIFIER |
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