Micron Technology Distributor - Memory - MT53B256M64D2NL-062 XT:C MT53B2DANL-DC - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Memory Type	Memory Format	Technology	Memory Size	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Memory Interface	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53B256M64D2NL-062 XT:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	1600MHz	-	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B2DANL-DC	Micron Technology Inc.	LPDDR4 16G 256MX64 FBGA DDP	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT29E1HT08ELHBBG1-3ES:B TR	Micron Technology Inc.	IC FLASH 1.5T PARALLEL 272VBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1.5Tb (192G x 8)	-	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29C1G12MAAIYAMR-5 AIT TR	Micron Technology Inc.	IC FLASH RAM 1G PARALLEL 200MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	1Gb (128M x 8)(NAND), 512M (16M x 32)(LPDRAM)	200MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29C1G12MAAJVAKC-5 IT TR	Micron Technology Inc.	MCP 64MX16/32MX16 PLASTIC GREEN	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C2DBGM-DC TR	Micron Technology Inc.	MASSFLASH/LPDDR2 8G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C3DAMF-DC TR	Micron Technology Inc.	MASSFLASH/LPDDR2 8G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C3DBAN-DC TR	Micron Technology Inc.	MASSFLASH/LPDDR2 12G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C4G48MAYBBAHK-48 AIT TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 208MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDRAM)	208MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29C4G48MAZBBAKB-48 IT TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 208MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (256M x 16)(NAND), 2G (128M x 16)(LPDRAM)	208MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29C4G96MAZBBCJV-48 IT TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 208MHZ	Obsolete	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)	208MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29C8G96MAZBBDKD-48 IT TR	Micron Technology Inc.	IC FLASH RAM 8G PARALLEL 208MHZ	Obsolete	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)	208MHz	-	-	Parallel	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	-	-	-
MT29E1HT08EMHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 1.5T PARALLEL 132VBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1.5Tb (192G x 8)	-	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1HT08EMHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1.5T PARALLEL 132VBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1.5Tb (192G x 8)	-	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T08CMHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T08CMHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T08CPCBBH8-6:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T08CUCBBH8-6:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T208ECHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 1.125T PARALLEL 132VBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1.125Tb (144G x 8)	-	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T208ECHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1.125T PARALLEL 132VBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1.125Tb (144G x 8)	-	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E256G08CECBBH6-6:B TR	Micron Technology Inc.	IC FLASH 256G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E2T08CTCBBJ7-6:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E2T08CUHBBM4-3:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E2T08CUHBBM4-3ES:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E384G08EBHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 384G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	384Gb (48G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E384G08EBHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 384G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	384Gb (48G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E3T08EUHBBM4-3:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E3T08EUHBBM4-3ES:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E4T08CTHBBM5-3:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E4T08CTHBBM5-3ES:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E512G08CEHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E512G08CEHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E512G08CKCBBH7-6:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E512G08CMCBBH7-6:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E512G08CMCCBH7-6ES:C TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E6T08ETHBBM5-3:B TR	Micron Technology Inc.	IC FLASH 6T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	6Tb (768G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E6T08ETHBBM5-3ES:B TR	Micron Technology Inc.	IC FLASH 6T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	6Tb (768G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E768G08EEHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 768G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	768Gb (96G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E768G08EEHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 768G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	768Gb (96G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08AECBBH6-6:B TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 152VBGA	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08AECBBH6-6IT:B TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08AKCDBJ5-6:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 132TBGA	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08AKCDBJ5-6IT:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08AMCDBJ5-6:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08AMCDBJ5-6IT:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08AMCDBL1-6:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08CBCBBH6-6R:B TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 166MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08CBEABH6-12IT:A TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08CBEABH6-12M:A TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08CECBBH1-10IT:B TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 100MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	100MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-

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