Part Number Manufacturer / Brand Brife Description Part StatusMemory TypeMemory FormatTechnologyMemory SizeClock FrequencyWrite Cycle Time - Word, PageAccess TimeMemory InterfaceVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device Package
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 90TFBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR512Mb (16M x 32)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)Surface Mount90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC FLASH 4G PARALLEL 48TSOP ActiveNon-VolatileFLASHFLASH - NAND (SLC)4Gb (512M x 8)
-
25ns25nsParallel2.7 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount48-TFSOP (0.724", 18.40mm Width)48-TSOP
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA ActiveVolatileDRAMSDRAM - DDR3L2Gb (128M x 16)800MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 105°C (TC)Surface Mount96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR1Gb (64M x 16)200MHz15ns5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 54TFBGA ActiveVolatileDRAMSDRAM - Mobile512Mb (32M x 16)166MHz
-
5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)Surface Mount54-TFBGA54-TFBGA (8x8)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 400MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR2-S4512Mb (16M x 32)400MHz15ns
-
Parallel1.14 V ~ 1.95 V-40°C ~ 85°C (TC)
-
-
-
ISSI, Integrated Silicon Solution Inc IC SRAM 4M PARALLEL 100LQFP ActiveVolatileSRAMSRAM - Synchronous4Mb (128K x 32)117MHz
-
7.5nsParallel3.135 V ~ 3.465 V-40°C ~ 125°C (TA)Surface Mount100-LQFP100-LQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC SRAM 4M PARALLEL 100LQFP ActiveVolatileSRAMSRAM - Synchronous4Mb (128K x 32)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 125°C (TA)Surface Mount100-LQFP100-LQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 90TFBGA ActiveVolatileDRAMSDRAM256Mb (8M x 32)166MHz
-
5.4nsParallel3 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (64M x 8)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 400MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR2-S42Gb (128M x 16)400MHz15ns
-
Parallel1.14 V ~ 1.95 V-40°C ~ 85°C (TC)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 78TWBGA ActiveVolatileDRAMSDRAM - DDR3L2Gb (256M x 8)800MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)Surface Mount78-TFBGA78-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 166MHZ ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 105°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 90TFBGA ActiveVolatileDRAMSDRAM256Mb (32M x 8)143MHz
-
5.4nsParallel3 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 800MHZ ActiveVolatileDRAMSDRAM - DDR31Gb (64M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 105°C (TC)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 84TWBGA ActiveVolatileDRAMSDRAM - DDR2512Mb (32M x 16)400MHz15ns400psParallel1.7 V ~ 1.9 V-40°C ~ 105°C (TA)Surface Mount84-TFBGA84-TWBGA (8x12.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA ActiveVolatileDRAMSDRAM - DDR3L2Gb (128M x 16)800MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)Surface Mount96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC SRAM 4M PARALLEL 100TQFP ActiveVolatileSRAMSRAM - Synchronous4Mb (128K x 32)117MHz
-
7.5nsParallel3.135 V ~ 3.465 V-40°C ~ 125°C (TA)Surface Mount100-LQFP100-TQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC SRAM 4M PARALLEL 100TQFP ActiveVolatileSRAMSRAM - Synchronous4Mb (128K x 32)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 125°C (TA)Surface Mount100-LQFP100-TQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC SRAM 4M PARALLEL 100LQFP ActiveVolatileSRAMSRAM - Synchronous4Mb (128K x 32)117MHz
-
7.5nsParallel2.375 V ~ 2.625 V-40°C ~ 125°C (TA)Surface Mount100-LQFP100-LQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 533MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR2-S41Gb (32M x 32)533MHz15ns
-
Parallel1.14 V ~ 1.95 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 66TSOP II ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)200MHz15ns700psParallel2.5 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount66-TSSOP (0.400", 10.16mm Width)66-TSOP II
ISSI, Integrated Silicon Solution Inc IC SRAM 8M PARALLEL 44TSOP2 ActiveVolatileSRAMSRAM - Asynchronous8Mb (512K x 16)
-
8ns8nsParallel2.4 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount44-TSOP (0.400", 10.16mm Width)44-TSOP2
ISSI, Integrated Silicon Solution Inc IC SRAM 8M PARALLEL 44TSOP ActiveVolatileSRAMSRAM - Asynchronous8Mb (512K x 16)
-
20ns20nsParallel1.65 V ~ 2.2 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 78TWBGA ActiveVolatileDRAMSDRAM - DDR3L2Gb (256M x 8)667MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)Surface Mount78-TFBGA78-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 84TWBGA ActiveVolatileDRAMSDRAM - DDR2512Mb (32M x 16)333MHz15ns450psParallel1.7 V ~ 1.9 V-40°C ~ 105°C (TA)Surface Mount84-TFBGA84-TWBGA (8x12.5)
ISSI, Integrated Silicon Solution Inc IC SRAM 8M PARALLEL 48TFBGA ActiveVolatileSRAMSRAM - Asynchronous8Mb (512K x 16)
-
10ns10nsParallel2.4 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount48-TFBGA48-TFBGA (6x8)
ISSI, Integrated Silicon Solution Inc IC SRAM 8M PARALLEL 48TFBGA ActiveVolatileSRAMSRAM - Asynchronous8Mb (512K x 16)
-
10ns10nsParallel2.4 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount48-TFBGA48-TFBGA (6x8)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (64M x 8)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA ActiveVolatileDRAMSDRAM - DDR32Gb (128M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 105°C (TC)Surface Mount96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 533MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR2-S42Gb (64M x 32)533MHz15ns
-
Parallel1.14 V ~ 1.95 V-40°C ~ 85°C (TC)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 54TFBGA ActiveVolatileDRAMSDRAM - Mobile512Mb (32M x 16)133MHz
-
6nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)Surface Mount54-TFBGA54-TFBGA (8x8)
ISSI, Integrated Silicon Solution Inc IC SRAM 16M PARALLEL 48TSOP ActiveVolatileSRAMSRAM - Asynchronous16Mb (1M x 16)
-
45ns45nsParallel2.2 V ~ 3.6 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 144LFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (16M x 32)200MHz15ns700psParallel2.5 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount144-LFBGA144-LFBGA (12x12)
ISSI, Integrated Silicon Solution Inc IC FLASH 4G PARALLEL 48TSOP ActiveNon-VolatileFLASHFLASH - NAND (SLC)4Gb (512M x 8)
-
45ns45nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)Surface Mount48-TFSOP (0.724", 18.40mm Width)48-TSOP
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 165TFBGA ActiveVolatileSRAMSRAM - Synchronous9Mb (256K x 36)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)Surface Mount165-TBGA165-TFBGA (13x15)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR1Gb (64M x 16)166MHz15ns5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA ActiveVolatileDRAMSDRAM - DDR32Gb (128M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)Surface Mount96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 66TSOP II ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount66-TSSOP (0.400", 10.16mm Width)66-TSOP II
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 66TSOP II ActiveVolatileDRAMSDRAM - DDR512Mb (64M x 8)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount66-TSSOP (0.400", 10.16mm Width)66-TSOP II
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 117MHZ ActiveVolatileSRAMSRAM - Synchronous9Mb (256K x 36)117MHz
-
7.5nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 100LQFP ActiveVolatileSRAMSRAM - Synchronous9Mb (512K x 18)117MHz
-
7.5nsParallel3.135 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount100-LQFP100-LQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 100LQFP ActiveVolatileSRAMSRAM - Synchronous9Mb (256K x 36)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)Surface Mount100-LQFP100-LQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 100LQFP ActiveVolatileSRAMSRAM - Synchronous9Mb (512K x 18)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)Surface Mount100-LQFP100-LQFP (14x20)
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 117MHZ ActiveVolatileSRAMSRAM - Synchronous9Mb (256K x 36)117MHz
-
7.5nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 117MHZ ActiveVolatileSRAMSRAM - Synchronous9Mb (512K x 18)117MHz
-
7.5nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 200MHZ ActiveVolatileSRAMSRAM - Synchronous9Mb (256K x 36)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)
-
-
-
ISSI, Integrated Silicon Solution Inc IC SRAM 9M PARALLEL 200MHZ ActiveVolatileSRAMSRAM - Synchronous9Mb (512K x 18)200MHz
-
3.1nsParallel3.135 V ~ 3.465 V-40°C ~ 85°C (TA)
-
-
-