메모리 - 집적 회로(IC) - MT53D384M32D2DS-046 AAT:C TR MT53D384M32D2DS-046 AIT:C TR MT53D384M32D2DS-046 AUT:C TR MT53D384M32D2DS-053 AAT ES:C TR - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	메모리 유형	메모리 형식	과학 기술	메모리 크기	클럭 주파수	쓰기 사이클 시간 - 단어, 페이지	액세스 시간	메모리 인터페이스	전압 - 공급	작동 온도	실장 형	패키지 / 케이스	공급 업체 장치 패키지
MT53D384M32D2DS-046 AAT:C TR	Micron Technology Inc.	IC DRAM 12G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D384M32D2DS-046 AIT:C TR	Micron Technology Inc.	IC DRAM 12G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53D384M32D2DS-046 AUT:C TR	Micron Technology Inc.	IC DRAM 12G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53D384M32D2DS-053 AAT ES:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D384M32D2DS-053 AAT:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D384M32D2DS-053 AIT:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53D384M32D2DS-053 AUT:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53D384M32D2DS-053 WT ES:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D384M32D2DS-053 WT:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D384M32D2DS-053 XT:C TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53D384M32D2DS-053 XT:E TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53D384M64D4KA-046 XT:E TR	Micron Technology Inc.	IC DRAM 24G 2133MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53D4DAKA-DC TR	Micron Technology Inc.	IC SDRAM LPDDR4 4G QDP	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53D4DANY-DC TR	Micron Technology Inc.	IC SDRAM LPDDR4 4G NA QDP	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53D4DFSB-DC TR	Micron Technology Inc.	IC SDRAM LPDDR4 32GBIT 512MX64 F	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53D512M32D2DS-046 AAT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D512M32D2DS-046 AIT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53D512M32D2DS-046 AUT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53D512M32D2DS-053 AAT:D TR	Micron Technology Inc.	IC DRAM 16G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D512M32D2DS-053 AIT:D TR	Micron Technology Inc.	IC DRAM 16G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53D512M32D2DS-053 WT:D TR	Micron Technology Inc.	IC DRAM 16G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M32D2NP-046 AAT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D512M32D2NP-046 AIT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53D512M32D2NP-046 AUT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53D512M32D2NP-046 WT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M32D2NP-046 WT:E TR	Micron Technology Inc.	IC SDRAM LPDDR4 16GBIT 512MX32 F	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M32D2NP-053 WT:D TR	Micron Technology Inc.	IC DRAM 16G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M32D2NP-062 WT:D TR	Micron Technology Inc.	IC DRAM 16G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	1600MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NW-046 WT:D TR	Micron Technology Inc.	IC DRAM 32G 2133MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NW-053 WT:D TR	Micron Technology Inc.	IC DRAM 32G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NW-062 WT:D TR	Micron Technology Inc.	IC DRAM 32G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	1600MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NZ-046 WT:E TR	Micron Technology Inc.	IC DRAM 32G 2133MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NZ-053 WT:D TR	Micron Technology Inc.	IC DRAM 32G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4RQ-046 WT:E TR	Micron Technology Inc.	IC DRAM 32G 2133MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4RQ-053 WT:E TR	Micron Technology Inc.	IC DRAM 32G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4SB-046 XT:D TR	Micron Technology Inc.	IC DRAM 32G 2133MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53D512M64D8TZ-053 WT:B TR	Micron Technology Inc.	IC DRAM 32G 1866MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8JS-053 WT:D TR	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA	Last Time Buy	Volatile	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8NZ-046 WT:E TR	Micron Technology Inc.	IC DRAM 48G 2133MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8RG-053 WT:D TR	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8SQ-046 WT:E TR	Micron Technology Inc.	IC DRAM 48G 2133MHZ FBGA	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	2133MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8SQ-053 WT:E TR	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8WF-053 WT:D TR	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D8DATZ-DC TR	Micron Technology Inc.	IC SDRAM LPDDR4 32GBIT 512MX64 F	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	1.1V	-	-	-	-
MTFC128GAOAMEA-WT TR	Micron Technology Inc.	IC FLASH 1T MMC	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	-	-	-	MMC	-	-25°C ~ 85°C (TA)	-	-	-
MTFC128GAOANEA-WT TR	Micron Technology Inc.	IC FLASH 1T MMC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	-	-	-	MMC	-	-25°C ~ 85°C (TA)	-	-	-
MTFC16GAKAEEF-AAT TR	Micron Technology Inc.	IC FLASH 128G MMC	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	-	-	-	MMC	-	-40°C ~ 105°C (TA)	-	-	-
MTFC16GAKAEEF-O1 AIT TR	Micron Technology Inc.	IC FLASH 128G MMC	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	-	-	-	MMC	-	-40°C ~ 85°C (TA)	-	-	-
MTFC256GAOAMAM-WT TR	Micron Technology Inc.	IC FLASH 2T MMC	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	-	-	-	MMC	-	-25°C ~ 85°C (TA)	-	-	-
MTFC256GBAOANAM-WT TR	Micron Technology Inc.	IC FLASH 2T MMC	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	-	-	-	MMC	-	-25°C ~ 85°C (TA)	-	-	-

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