메모리 - 집적 회로(IC) - MT29F1G01ABAFDSF-IT:F MT29F1G01ABBFDSF-IT:F MT25QL256ABA8E12-1SAT MT29F2G01ABAGD12-IT:G - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	메모리 유형	메모리 형식	과학 기술	메모리 크기	클럭 주파수	쓰기 사이클 시간 - 단어, 페이지	액세스 시간	메모리 인터페이스	전압 - 공급	작동 온도	실장 형	패키지 / 케이스	공급 업체 장치 패키지
MT29F1G01ABAFDSF-IT:F	Micron Technology Inc.	IC FLASH 1G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Gb (1G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F1G01ABBFDSF-IT:F	Micron Technology Inc.	IC FLASH 1G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Gb (1G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT25QL256ABA8E12-1SAT	Micron Technology Inc.	IC FLASH 256M SPI 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	256Mb (32M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F2G01ABAGD12-IT:G	Micron Technology Inc.	IC FLASH 2G SPI 83MHZ TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	83MHz	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G01ABBGDSF-IT:G	Micron Technology Inc.	IC FLASH 2G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G08ABAGAWP-ITE:G	Micron Technology Inc.	IC FLASH 2G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABAFD12-ITES:F	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABAFDWB-ITES:F	Micron Technology Inc.	IC FLASH 4G SPI UPDFN	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABBFD12-ITES:F	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABBFDWB-ITES:F	Micron Technology Inc.	IC FLASH 4G SPI UPDFN	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABAFAWP-ITES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABAFAWP-ITES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G01ABAGD12-AAT:G	Micron Technology Inc.	IC FLASH 2G SPI 83MHZ TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	83MHz	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F2G01ABAGDSF-AAT:G	Micron Technology Inc.	IC FLASH 2G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F2G16ABAEAWP-AAT:E	Micron Technology Inc.	IC FLASH 2G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (128M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MT29F2G16ABBEAH4-AAT:E	Micron Technology Inc.	IC FLASH 2G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (128M x 16)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT41K256M8DA-107 IT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 933MHZ	Last Time Buy	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT29F4G01ADAGDSF-IT:G	Micron Technology Inc.	IC FLASH 4G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABAFAH4-AITES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABAFAH4-AITES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT25QL512ABB8E12-0AUT	Micron Technology Inc.	IC FLASH 512M SPI 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	512Mb (64M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QU512ABB8E12-0AUT	Micron Technology Inc.	IC FLASH 512M SPI 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	512Mb (64M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT53B128M32D1NP-062 WT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT29F8G01ADAFD12-ITES:F	Micron Technology Inc.	IC FLASH 8G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (8G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F8G01ADBFD12-ITES:F	Micron Technology Inc.	IC FLASH 8G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (8G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F64G08CBCGBWP-B:G	Micron Technology Inc.	IC FLASH 64G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08CBCGBWP-BES:G	Micron Technology Inc.	IC FLASH 64G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT41K256M16TW-107 V:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K512M8DA-107 V:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K512M8DA-125:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 800MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	800MHz	-	13.5ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
EDB2432B4MA-1DIT-F-D	Micron Technology Inc.	IC DRAM 2G PARALLEL 533MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	533MHz	-	-	Parallel	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
MT29F64G08CBCGBSX-37B:G	Micron Technology Inc.	IC FLASH 64G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08CBCGBSX-37BES:G	Micron Technology Inc.	IC FLASH 64G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT46V128M4CY-5B:J	Micron Technology Inc.	IC DRAM 512M PARALLEL 200MHZ	Active	Volatile	DRAM	SDRAM - DDR	512Mb (128M x 4)	200MHz	15ns	700ps	Parallel	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	-	-	-
MT29RZ4B2DZZHHTB-18I.80F	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-40°C ~ 85°C (TA)	-	-	-
MT29F8G08ABACAH4-ITS:C	Micron Technology Inc.	IC FLASH 8G PARALLEL FBGA	Obsolete	Non-Volatile	FLASH	FLASH - NAND	8Gb (1G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT41K1G4RG-107:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (1G x 4)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT53B128M32D1DS-062 AIT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53B128M32D1NP-062 AIT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABAFD12-AATES:F	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G01ABBFD12-AATES:F	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G08ABAFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G08ABBFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT29F4G16ABAFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G16ABBFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT53B128M32D1DS-062 AAT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53B128M32D1NP-062 AAT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT41K128M16JT-125 AUT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT41K256M8DA-125 AUT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT29F8G01ADAFD12-AATES:F	Micron Technology Inc.	IC FLASH 8G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (8G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-

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