작동 온도 is -40°C ~ 125°C (TC) - 메모리 Distributor - MT40A1G8WE-083E AUT:B MT40A256M16GE-075E AUT:B MT40A256M16GE-083E AUT:B

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	메모리 유형	메모리 형식	과학 기술	메모리 크기	클럭 주파수	쓰기 사이클 시간 - 단어, 페이지	액세스 시간	메모리 인터페이스	전압 - 공급	작동 온도	실장 형	패키지 / 케이스	공급 업체 장치 패키지
MT40A1G8WE-083E AUT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A256M16GE-075E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A256M16GE-083E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M16JY-083E AUT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M8RH-075E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M8RH-083E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT41K128M16JT-125 AUT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT41K256M16TW-107 AUT:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	-	-	-
MT41K256M8DA-125 AUT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K64M16TW-107 AUT:J	Micron Technology Inc.	IC DRAM 1G PARALLEL 933MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT47H32M16NF-25E AUT:H	Micron Technology Inc.	IC DRAM 512M PARALLEL 400MHZ	Active	Volatile	DRAM	SDRAM - DDR2	512Mb (32M x 16)	400MHz	15ns	400ps	Parallel	1.7 V ~ 1.9 V	-40°C ~ 125°C (TC)	-	-	-
MT47H64M16NF-25E AUT:M	Micron Technology Inc.	IC DRAM 1G PARALLEL 400MHZ	Active	Volatile	DRAM	SDRAM - DDR2	1Gb (64M x 16)	400MHz	15ns	400ps	Parallel	1.7 V ~ 1.9 V	-40°C ~ 125°C (TC)	-	-	-

제조 업체 메모리