전압 - 공급 is 1.28 V ~ 1.42 V - 메모리 Distributor - MT44K16M36RB-093 IT:A MT44K16M36RB-093:A MT44K16M36RB-093E IT:A - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	메모리 유형	메모리 형식	과학 기술	메모리 크기	클럭 주파수	쓰기 사이클 시간 - 단어, 페이지	액세스 시간	메모리 인터페이스	전압 - 공급	작동 온도	실장 형	패키지 / 케이스	공급 업체 장치 패키지
MT44K16M36RB-093 IT:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-093:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-093E IT:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-093E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ	Active	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-093E:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-093E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ	Active	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-093F:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ	Active	Volatile	DRAM	DRAM	576Mb (16M x 36)	1067MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-107:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	933MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-107E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-107E:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-107E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	576Mb (16M x 36)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-125:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	800MHz	-	12ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-125E:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	800MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K16M36RB-125F:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (16M x 36)	800MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-093 IT:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	1067MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-093:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	1067MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-093E IT:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-093E:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-093E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ	Active	Volatile	DRAM	DRAM	576Mb (32M x 18)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M18RB-093F:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	1067MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M18RB-107:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	933MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-107E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	576Mb (32M x 18)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT44K32M18RB-107E:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-107E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	576Mb (32M x 18)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M18RB-125:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	800MHz	-	12ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-125E IT:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Active	Volatile	DRAM	DRAM	576Mb (32M x 18)	800MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-125E:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	800MHz	-	10ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M18RB-125F:A	Micron Technology Inc.	IC DRAM 576M PARALLEL 168BGA	Obsolete	Volatile	DRAM	DRAM	576Mb (32M x 18)	800MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
MT44K32M36RB-083E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Obsolete	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	1200MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-083F:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	1200MHz	-	6.67ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-093E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-093F:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ	Obsolete	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	1067MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-107E IT:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-107E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-083E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Obsolete	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	1200MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-083F:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	1200MHz	-	6.67ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-093E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	1067MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-093F:A	Micron Technology Inc.	RLDRAM 3 1.125G 64MX18 TBGA	Obsolete	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	1067MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-107E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-

제조 업체 메모리