다이오드 - 정류기 - 단일 - 이산 소자 반도체 제품 - BYC8X-600,127 BYV79E-200,127 SFF1606G C0G BYW29EX-200,127 - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
BYC8X-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220F	Active	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	52ns	150µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYV79E-200,127	WeEn Semiconductors	DIODE GEN PURP 200V 14A TO220AC	Active	Standard	200V	14A	1.05V @ 14A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	50µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
SFF1606G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A ITO220AB	Active	Standard	400V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
BYW29EX-200,127	WeEn Semiconductors	DIODE GEN PURP 200V 8A TO220F	Active	Standard	200V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
VS-ETH0806-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220-2	Active	Standard	600V	8A	2.65V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	21ns	12µA @ 600V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
BYC10-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 10A TO220AC	Active	Standard	500V	10A	2.9V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	200µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BYC15X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 15A TO220F	Active	Standard	600V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
STPS30SM120ST	STMicroelectronics	DIODE SCHOTTKY 120V 30A TO220AB	Active	Schottky	120V	30A	950mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	275µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	150°C (Max)
STTH15RQ06D	STMicroelectronics	DIODE GEN PURP 600V 15A TO220AC	Active	Standard	600V	15A	2.95V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
NRVB120ESFT1G	ON Semiconductor	DIODE SCHOTTKY 20V 1A SOD123	Active	Schottky	20V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
BYT79X-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 15A TO220F	Active	Standard	600V	15A	1.38V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYT79-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 15A TO220AC	Active	Standard	600V	15A	1.38V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
STTH15RQ06W	STMicroelectronics	DIODE GEN PURP 600V 15A DO247	Active	Standard	600V	15A	2.95V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
GP2D003A060C	Global Power Technologies Group	DIODE SCHOTTKY 600V 3A DPAK-2	Active	Silicon Carbide Schottky	600V	3A (DC)	1.65V @ 3A	No Recovery Time > 500mA (Io)	0ns	10µA @ 600V	158pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2L (DPAK)	-55°C ~ 175°C
VS-ETX3007THN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 650V 30A TO220AC	Active	Standard	650V	30A	2.5V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 650V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
BYC20X-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 20A TO220F	Active	Standard	500V	20A	2.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	200µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
RFN20TJ6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 20A TO220	Active	Standard	600V	20A	1.55V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C (Max)
GB01SLT12-252	GeneSiC Semiconductor	DIODE SILICON 1.2KV 1A TO252	Active	Silicon Carbide Schottky	1200V	1A	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	2µA @ 1200V	69pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 175°C
STBR3012W	STMicroelectronics	DIODE GEN PURP 1.2KV 30A DO247	Active	Standard	1200V	30A	1.3V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
NXPSC04650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A TO220AC	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
SCS304APC9	Rohm Semiconductor	DIODE SCHOTTKY 650V 4A TO220-2	Active	Silicon Carbide Schottky	650V	4A (DC)	1.5V @ 4A	No Recovery Time > 500mA (Io)	0ns	20µA @ 650V	200pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
SCS206AJHRTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 6A TO263AB	Active	Silicon Carbide Schottky	650V	6A (DC)	1.55V @ 6A	No Recovery Time > 500mA (Io)	0ns	120µA @ 600V	219pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
BYC30X-600P,127	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220F	Active	Standard	600V	30A	1.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	175°C (Max)
VS-EPH3006-F3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
FFSD08120A	ON Semiconductor	1200V 8A SIC SBD	Active	Silicon Carbide Schottky	1200V	22.5A (DC)	1.75V @ 8A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	538pF @ 1V, 100kHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
VS-E4PH6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AD	Active	Standard	600V	60A	2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	68ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-E4PU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AD	Active	Standard	600V	60A	1.7V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	74ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
HFA15PB60PBF	Infineon Technologies	DIODE GEN PURP 600V 15A TO247AC	Active	Standard	600V	15A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
IDH06G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO220-2-1	Active	Silicon Carbide Schottky	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	110µA @ 650V	190pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
CDBD2SC21200-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	1200V	6.2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	136pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
VS-C4PU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PH6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
STPSC8065DY	STMicroelectronics	DIODE SCHOTTKY 650V 8A TO220AC	Active	Silicon Carbide Schottky	650V	8A	1.45V @ 8A	No Recovery Time > 500mA (Io)	0ns	105µA @ 650V	540pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
FFH50US60S-F085	ON Semiconductor	DIODE GEN PURP 600V 50A TO247-2	Active	Standard	600V	50A	1.69V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	163ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
STTH30R04W	STMicroelectronics	DIODE GEN PURP 400V 30A DO247	Active	Standard	400V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
NXPSC06650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A TO220AC	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
APT30DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 30A TO247	Active	Standard	1000V	30A	3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	295ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
STPSC10065D	STMicroelectronics	DIODE SCHOTTKY 650V 10A TO220AC	Active	Silicon Carbide Schottky	650V	10A	1.45V @ 10A	No Recovery Time > 500mA (Io)	0ns	130µA @ 650V	670pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
VS-CPU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
1N5620C.TR	Semtech Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Avalanche	800V	2A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	23pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
1N5616C.TR	Semtech Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Avalanche	400V	2A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	23pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
CDBDSC8650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	25.5A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	550pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252)	-55°C ~ 175°C
SICRF5650	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	5A	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
SICR5650	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	5A	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SICRF6650	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	6A	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	150pF @ 5V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
SICR6650	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S	Active	Silicon Carbide Schottky	650V	6A	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	150pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
NXPLQSC10650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A TO220AC	Active	Silicon Carbide Schottky	650V	10A	1.85V @ 10A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N5806C.TR	Semtech Corporation	DIODE GEN PURP 150V 2.5A AXIAL	Active	Standard	150V	2.5A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
VS-15ETH06FP-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220FP	Active	Standard	600V	15A	2.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	29ns	40µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-65°C ~ 175°C
SCS210AJHRTLL	Rohm Semiconductor	DIODE SCHOTTKY 650V 10A TO263AB	Active	Silicon Carbide Schottky	650V	10A (DC)	1.55V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	365pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)

제조 업체 다이오드 - 정류기 - 단일