다이오드 - 정류기 - 단일 - 이산 소자 반도체 제품 - RL255-TP RL256-TP RL257-TP IDW10S120FKSA1 - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
RL255-TP	Micro Commercial Co	DIODE GEN PURP 2.5A 600V R3	Obsolete	Standard	600V	2.5A	1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	35pF @ 4V, 1MHz	Through Hole	R-3, Axial	R-3	-55°C ~ 150°C
RL256-TP	Micro Commercial Co	DIODE GEN PURP 2.5A 800V R3	Obsolete	Standard	800V	2.5A	1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	35pF @ 4V, 1MHz	Through Hole	R-3, Axial	R-3	-55°C ~ 150°C
RL257-TP	Micro Commercial Co	DIODE GEN PURP 2.5A 1000V R3	Obsolete	Standard	1000V	2.5A	1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	35pF @ 4V, 1MHz	Through Hole	R-3, Axial	R-3	-55°C ~ 150°C
IDW10S120FKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 10A TO247-3	Obsolete	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	240µA @ 1200V	580pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDW15S120FKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 15A TO247-3	Obsolete	Silicon Carbide Schottky	1200V	15A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	305µA @ 1200V	870pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
1N4148 BK	Central Semiconductor Corp	DIODE GP 100V 150MA DO35	Obsolete	Standard	100V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
CN4157 TR	Central Semiconductor Corp	DIODE GEN PURP 20V DO35	Obsolete	Standard	20V	-	2.66V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
CN4157 BK	Central Semiconductor Corp	DIODE GEN PURP 20V DO35	Obsolete	Standard	20V	-	2.66V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
CN5179 BK	Central Semiconductor Corp	DIODE GEN PURP 20V DO35	Obsolete	Standard	20V	-	3.7V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
IDC04S60CEX1SA1	Infineon Technologies	DIODE SIC 600V 4A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC04S60CEX7SA1	Infineon Technologies	DIODE GEN PURPOSE SAWN WAFER	Obsolete	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
IDC05S60CEX1SA1	Infineon Technologies	DIODE SIC 600V 5A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC08S60CEX1SA2	Infineon Technologies	DIODE SIC 600V 8A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC08S60CEX1SA3	Infineon Technologies	DIODE SIC 600V 8A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC08S60CEX7SA1	Infineon Technologies	DIODE GEN PURPOSE SAWN WAFER	Obsolete	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
CPD65-BAV45-CT	Central Semiconductor Corp	DIODE GEN PURP 20V 50MA DIE	Active	Standard	20V	50mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	600ns	5pA @ 5V	1.3pF @ 0V, 1MHz	Surface Mount	Die	Die	-65°C ~ 125°C
1N4002SP BK	Central Semiconductor Corp	DIODE GEN PURP 100V 1A DO41	Obsolete	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4004 BK	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41	Obsolete	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4004GPP BK	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41	Obsolete	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4005GL BK	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41	Obsolete	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4005GPP BK	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41	Obsolete	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4006 BK	Central Semiconductor Corp	DIODE GEN PURP 800V 1A DO41	Obsolete	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4007GPP BK	Central Semiconductor Corp	DIODE GEN PURP 1KV 1A DO41	Obsolete	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4002GL TR	Central Semiconductor Corp	DIODE GEN PURP 100V 1A DO41	Obsolete	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4002SP TR	Central Semiconductor Corp	DIODE GEN PURP 100V 1A DO41	Obsolete	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4003 TR	Central Semiconductor Corp	DIODE GEN PURP 200V 1A DO41	Obsolete	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4003GL TR	Central Semiconductor Corp	DIODE GEN PURP 200V 1A DO41	Obsolete	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4004GPP TR	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41	Obsolete	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4004SP TR	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41	Obsolete	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4005GL TR	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41	Obsolete	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4005GPP TR	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41	Obsolete	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4006 TR	Central Semiconductor Corp	DIODE GEN PURP 800V 1A DO41	Obsolete	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N4007GPP TR	Central Semiconductor Corp	DIODE GEN PURP 1KV 1A DO41	Obsolete	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
SMD12HE-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 1A SOD123HE	Obsolete	Schottky	20V	1A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SMD13HE-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 1A SOD123HE	Obsolete	Schottky	30V	1A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SMD15HE-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 1A SOD123HE	Obsolete	Schottky	50V	1A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SMD18HE-TP	Micro Commercial Co	DIODE SCHOTTKY 80V 1A SOD123HE	Obsolete	Schottky	80V	1A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 180°C
SMD22HE-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 2A SOD123HE	Obsolete	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SMD23HE-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 2A SOD123HE	Obsolete	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SMD25HE-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 2A SOD123HE	Obsolete	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SMD28HE-TP	Micro Commercial Co	DIODE SCHOTTKY 80V 2A SOD123HE	Obsolete	Schottky	80V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS35HE-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 3A SOD123HE	Obsolete	Schottky	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS38HE-TP	Micro Commercial Co	DIODE SCHOTTKY 80V 3A SOD123HE	Obsolete	Schottky	80V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
APT30SCD65B	Microsemi Corporation	DIODE SIC 650V 46A TO247	Obsolete	Silicon Carbide Schottky	650V	46A	1.8V @ 30A	No Recovery Time > 500mA (Io)	0ns	600µA @ 650V	945pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 150°C
MBR10H100-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO220AC	Obsolete	Schottky	100V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
SB030-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V DO-201AD	Obsolete	Schottky	30V	5A	480mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SB050-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V DO-201AD	Obsolete	Schottky	50V	600mA	700mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
V12P12-5001M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A	Obsolete	Schottky	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
V12P12-5001M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A	Obsolete	Schottky	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
V12P12-5300M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A	Obsolete	Schottky	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C

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