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  4. 다이오드 - 정류기 - 단일
  5. 제작품

제조 업체 다이오드 - 정류기 - 단일

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
부품 번호 제조업체 / 브랜드 간단한 설명 부품 상태다이오드 유형전압 - 직류 역전 (Vr) (최대)전류 - 평균 정류 (Io)전압 - 순방향 (Vf) (최대) @ If속도역 회복 시간 (trr)전류 - Vr의 역 누설커패시턴스 @ Vr, F실장 형패키지 / 케이스공급 업체 장치 패키지작동 온도 - 정션
JANTXV1N6625U
 Microsemi Corporation DIODE GEN PURP 1KV 1A A-MELF ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns1µA @ 1000V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6626U
 Microsemi Corporation DIODE GEN PURP 200V 1.75A E-MELF ActiveStandard200V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 200V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6626U
 Microsemi Corporation DIODE GEN PURP 200V 1.75A E-MELF ActiveStandard200V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 200V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6627U
 Microsemi Corporation DIODE GEN PURP 400V 1.75A E-MELF ActiveStandard400V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 400V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6628U
 Microsemi Corporation DIODE GEN PURP 600V 1.75A E-MELF ActiveStandard600V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 600V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6628U
 Microsemi Corporation DIODE GEN PURP 600V 1.75A E-MELF ActiveStandard600V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 600V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6629U
 Microsemi Corporation DIODE GEN PURP 800V 1.4A E-MELF ActiveStandard800V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 800V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTX1N6629U
 Microsemi Corporation DIODE GEN PURP 800V 1.4A E-MELF Discontinued at -Standard800V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 800V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6630U
 Microsemi Corporation DIODE GEN PURP 900V 1.4A E-MELF ActiveStandard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTX1N6630U
 Microsemi Corporation DIODE GEN PURP 900V 1.4A E-MELF ActiveStandard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTX1N6630US
 Microsemi Corporation DIODE GEN PURP 900V 1.4A E-MELF Discontinued at -Standard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6631
 Microsemi Corporation DIODE GEN PURP 1.1KV 1.4A D5B Discontinued at -Standard1100V1.4A1.6V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)60ns4µA @ 1100V40pF @ 10V, 1MHzThrough HoleE, AxialE-PAK-65°C ~ 150°C
JAN1N6631U
 Microsemi Corporation DIODE GEN PURP 1KV 1.4A E-MELF ActiveStandard1000V1.4A1.6V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)60ns4µA @ 1000V
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Surface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6640US
 Microsemi Corporation DIODE GEN PURP 50V 300MA B-MELF Discontinued at -Standard50V300mA1V @ 300mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTX1N6642UB
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA (DC)1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V
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Surface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTXV1N6642UB
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V
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Surface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JAN1N6642UBCA
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns500nA @ 75V5pF @ 0V, 1MHzSurface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTX1N6642UBCA
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB Discontinued at -Standard75V300mA (DC)1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V
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Surface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTXV1N914
 Microsemi Corporation DIODE GEN PURP 75V 200MA DO35 Discontinued at -Standard75V200mA1.2V @ 50mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V2.8pF @ 1.5V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35 (DO-204AH)-65°C ~ 175°C
JANTXV1N914UR
 Microsemi Corporation DIODE GEN PURP 75V 200MA DO213AA Discontinued at -Standard75V200mA1.2V @ 50mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V2.8pF @ 1.5V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 175°C
RJS6004TDPP-EJ#T2
 Renesas Electronics America DIODE SCHOTTKY 600V 10A TO220FP ActiveSchottky600V10A (DC)1.8V @ 10AFast Recovery =< 500ns, > 200mA (Io)15ns10µA @ 600V
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Surface MountTO-220-3 Full PackTO-220FP-55°C ~ 150°C
RJS6005TDPP-EJ#T2
 Renesas Electronics America DIODE SCHOTTKY 600V 15A TO220FP ActiveSchottky600V15A (DC)1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)15ns10µA @ 600V
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Through HoleTO-220-2 Full PackTO-220FP-2L-55°C ~ 150°C
RJU3051SDPE-00#J3
 Renesas Electronics America DIODE GEN PURP 360V 10A LDPAK ActiveStandard360V10A (DC)1.7V @ 10AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 360V
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Surface MountSC-834-LDPAK-55°C ~ 150°C
RJU3052SDPD-E0#J2
 Renesas Electronics America DIODE GEN PURP 360V 20A TO252 ActiveStandard360V20A1.7V @ 20AFast Recovery =< 500ns, > 200mA (Io)50ns1µA @ 360V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-55°C ~ 150°C
RJU4351SDPE-00#J3
 Renesas Electronics America DIODE GEN PURP 430V 10A LDPAK ActiveStandard430V10A1.9V @ 10AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 430V
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Surface MountSC-834-LDPAK-55°C ~ 150°C
RJU4351TDPP-EJ#T2
 Renesas Electronics America DIODE GP 430V 10A TO220FP-2L ActiveStandard430V10A1.9V @ 10AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 430V
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Through HoleTO-220-2 Full PackTO-220FP-2L-55°C ~ 150°C
RJU4352SDPD-E0#J2
 Renesas Electronics America DIODE GEN PURP 430V 20A TO252 ActiveStandard430V20A1.8V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 430V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-55°C ~ 150°C
RJU4352SDPE-00#J3
 Renesas Electronics America DIODE GEN PURP 430V 20A LDPAK ActiveStandard430V20A1.8V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 430V
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Surface MountSC-834-LDPAK-55°C ~ 150°C
RJU4352TDPP-EJ#T2
 Renesas Electronics America DIODE GP 430V 20A TO220FP-2L ActiveStandard430V20A1.8V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 430V
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Through HoleTO-220-2 Full PackTO-220FP-2L-55°C ~ 150°C
RJU6052SDPD-E0#J2
 Renesas Electronics America DIODE GEN PURP 600V 20A TO252 ActiveStandard600V20A3V @ 10AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-55°C ~ 150°C
RJU6052SDPE-00#J3
 Renesas Electronics America DIODE GEN PURP 600V 20A LDPAK ActiveStandard600V20A3V @ 10AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 600V
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Surface MountSC-834-LDPAK-55°C ~ 150°C
RJU6053SDPE-00#J3
 Renesas Electronics America DIODE GEN PURP 600V 20A LDPAK ActiveStandard600V20A3V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 600V
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Surface MountSC-834-LDPAK-55°C ~ 150°C
RJU6053WDPP-M0#T2
 Renesas Electronics America DIODE GEN PURP 600V 20A TO220FL ActiveStandard600V20A3V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 600V
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Through HoleTO-220-3 Full PackTO-220FL-55°C ~ 150°C
RJU6054SDPE-00#J3
 Renesas Electronics America DIODE GEN PURP 600V 30A LDPAK ActiveStandard600V30A3V @ 30AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 600V
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Surface MountSC-834-LDPAK-55°C ~ 150°C
SB120-B
 Diodes Incorporated DIODE SCHOTTKY 20V 1A DO41 ObsoleteSchottky20V1A500mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 125°C
SB140-B
 Diodes Incorporated DIODE SCHOTTKY 40V 1A DO41 ObsoleteSchottky40V1A500mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 125°C
SB150-B
 Diodes Incorporated DIODE SCHOTTKY 50V 1A DO41 ObsoleteSchottky50V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 150°C
SB160-B
 Diodes Incorporated DIODE SCHOTTKY 60V 1A DO41 ObsoleteSchottky60V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
-
Through HoleDO-204AL, DO-41, AxialDO-41-65°C ~ 150°C
SBRT4U15LP-7
 Diodes Incorporated DIODE SBR 15V 4A U-DFN2020-2 ActiveSuper Barrier15V4A470mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 15V
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Surface Mount2-UFDFNU-DFN2020-2-55°C ~ 150°C
PMEG1201AESFYL
 Nexperia USA Inc. DIODE SCHOTTKY 12V 0.1A SOD962 ObsoleteSchottky12V100mA200mV @ 30mAFast Recovery =< 500ns, > 200mA (Io)2.2ns2mA @ 12V26pF @ 1V, 1MHzSurface Mount0201 (0603 Metric)DSN0603-2125°C (Max)
CDBA120SL-HF
 Comchip Technology DIODE SCHOTTKY 20V 1A DO214AC ObsoleteSchottky20V1A (DC)330mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 20V160pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-50°C ~ 100°C
MBRH15020L
 GeneSiC Semiconductor DIODE SCHOTTKY 20V 150A D-67 ActiveSchottky20V150A580mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 20V
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Chassis MountD-67D-67
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MBRH15020RL
 GeneSiC Semiconductor DIODE SCHOTTKY 20V 150A D-67 ActiveSchottky, Reverse Polarity20V150A580mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 20V
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Chassis MountD-67D-67
-
MBRH15030L
 GeneSiC Semiconductor DIODE SCHOTTKY 30V 150A D-67 ActiveSchottky30V150A580mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 30V
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Chassis MountD-67D-67-55°C ~ 150°C
MBRH15030RL
 GeneSiC Semiconductor DIODE SCHOTTKY 30V 150A D-67 ActiveSchottky, Reverse Polarity30V150A
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Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
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Chassis MountD-67D-67
-
MBRH15035L
 GeneSiC Semiconductor DIODE SCHOTTKY 35V 150A D-67 ActiveSchottky35V150A600mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 35V
-
Chassis MountD-67D-67
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MBRH15035RL
 GeneSiC Semiconductor DIODE SCHOTTKY 35V 150A D-67 ActiveSchottky, Reverse Polarity35V150A600mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 35V
-
Chassis MountD-67D-67
-
MBRH15040L
 GeneSiC Semiconductor DIODE SCHOTTKY 40V 150A D-67 ActiveSchottky40V150A600mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 40V
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Chassis MountD-67D-67
-
MBRH15040RL
 GeneSiC Semiconductor DIODE SCHOTTKY 40V 150A D-67 ActiveSchottky, Reverse Polarity40V150A600mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 40V
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Chassis MountD-67D-67
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MBRH15045L
 GeneSiC Semiconductor DIODE SCHOTTKY 45V 150A D-67 ActiveSchottky45V150A600mV @ 150AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 45V
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Chassis MountD-67D-67
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