Taiwan Semiconductor Distributor - 다이오드 - 정류기 - 단일 - MUR305SHR7G MUR310SHR7G - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
MUR305SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR310SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR315SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR320SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SSL22 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL23 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL24 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
MUR340S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ES3DB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	46pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3DBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	46pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3FB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA	Active	Standard	300V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3FBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA	Active	Standard	300V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3GBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.13V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3HB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO214AA	Active	Standard	500V	3A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	34pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3HBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO214AA	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.45V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
6A05G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	Active	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	Active	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	Active	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
MUR420S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Not For New Designs	Standard	200V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR440S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Not For New Designs	Standard	400V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR460S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Not For New Designs	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR420S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Active	Standard	200V	4A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR440S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Active	Standard	400V	4A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR460S V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Active	Standard	600V	4A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S12GC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB	Active	Standard	400V	12A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12JC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A DO214AB	Active	Standard	600V	12A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12KC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB	Active	Standard	800V	12A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12MC V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 12A DO214AB	Active	Standard	-	12A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR509 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR510 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR509 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR509 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR510 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS310 M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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