Taiwan Semiconductor Distributor - 다이오드 - 정류기 - 단일 - SS36L RFG SS29 R5G - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
SS36L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK19B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO214AA	Active	Schottky	90V	1A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS210HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AA	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS29 M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR160AHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
MUR160AHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
SK110BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AA	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2B M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2D M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2F M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO214AA	Active	Standard	300V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2G M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2J M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
TSSA3U45 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A DO214AC	Active	Schottky	45V	3A	480mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK19BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO214AA	Active	Schottky	90V	1A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS310L RTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310L RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310L MQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS3A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES2DV M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3F M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Not For New Designs	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Not For New Designs	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Not For New Designs	Standard	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3F V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Active	Standard	300V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3G V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3K V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3M V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Active	Standard	-	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES2BAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AC	Active	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2CAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AC	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2GAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AC	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SR302 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO201AD	Active	Schottky	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR303 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	Active	Schottky	30V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR304 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR305 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO201AD	Active	Schottky	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR306 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO201AD	Active	Schottky	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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