Taiwan Semiconductor Distributor - 다이오드 - 정류기 - 단일 - SR109 R1G SR110 R1G - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
SR109 R1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	Active	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR110 R1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO204AL	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5391GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	Active	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5392GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	Active	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5393GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	Active	Standard	200V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5395GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	Active	Standard	400V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5397GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	Active	Standard	600V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5398GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	Active	Standard	800V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5399GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	Active	Standard	-	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1JHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1KHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1MHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AC	Active	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
1N4936GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5817HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5818HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5819HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	Active	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
BA158GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR102HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR103HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR104HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR105HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO204AL	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR106HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO204AL	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR109 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	Active	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR110 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO204AL	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1JHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1KHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1MHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AC	Active	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
BAS19W RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOT323	Active	Standard	100V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
BAS20W RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 200MA SOT323	Active	Standard	150V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
1N4936GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5818HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5819HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	Active	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
BA158GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR102HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR103HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR104HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR105HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO204AL	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR106HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO204AL	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR109 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	Active	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5391GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	Active	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5392GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	Active	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5393GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	Active	Standard	200V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5395GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	Active	Standard	400V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5397GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	Active	Standard	600V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5398GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	Active	Standard	800V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5399GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	Active	Standard	-	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N4936GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5391GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	Active	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5392GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	Active	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5393GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	Active	Standard	200V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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