Microsemi Distributor - 다이오드 - 정류기 - 단일 - JANTXV1N6624US JANTXV1N6621US - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
JANTXV1N6624US	Microsemi Corporation	DIODE GEN PURP 900V 1A D5A	Active	Standard	900V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	500nA @ 150V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6621US	Microsemi Corporation	DIODE GEN PURP 440V 1.2A D5A	Active	Standard	440V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6623US	Microsemi Corporation	DIODE GEN PURP 880V 1A D5A	Active	Standard	880V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 880V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6626U	Microsemi Corporation	DIODE GEN PURP 200V 1.75A A-MELF	Active	Standard	200V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6627U	Microsemi Corporation	DIODE GEN PURP 400V 1.75A E-MELF	Active	Standard	400V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 400V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTXV1N6074	Microsemi Corporation	DIODE GEN PURP 100V 850MA AXIAL	Active	Standard	100V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 100V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 155°C
JANTXV1N6075	Microsemi Corporation	DIODE GEN PURP 150V 850MA AXIAL	Active	Standard	150V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
JANTXV1N6073	Microsemi Corporation	DIODE GEN PURP 50V 850MA AXIAL	Active	Standard	50V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
1N6076US	Microsemi Corporation	DIODE GEN PURP 50V 6A D5B	Active	Standard	50V	6A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 155°C
1N6077US	Microsemi Corporation	DIODE GEN PURP 100V 6A D5B	Active	Standard	100V	6A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 155°C
1N5711UB	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5712UB	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
MSC050SDA120S	Microsemi Corporation	UNRLS FG GEN2 SIC SBD TO-268	Active	Silicon Carbide Schottky	1200V	50A (DC)	-	No Recovery Time > 500mA (Io)	0ns	-	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3Pak	-
R3520	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3520PF	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3540	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3540PF	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3560	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3560PF	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3580	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
UES1103SM	Microsemi Corporation	DIODE GEN PURP 150V 2.5A A-MELF	Active	Standard	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Surface Mount	SQ-MELF, A	A-MELF	175°C (Max)
1N4525	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4526	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4527	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4528	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4529	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4530	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N6620US	Microsemi Corporation	DIODE GEN PURP 220V 1.2A D5A	Active	Standard	220V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 220V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6076	Microsemi Corporation	DIODE GEN PURP 50V 1.3A AXIAL	Active	Standard	50V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 155°C
JAN1N6077	Microsemi Corporation	DIODE GEN PURP 100V 1.3A AXIAL	Active	Standard	100V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 155°C
JAN1N6628US	Microsemi Corporation	DIODE GEN PURP 660V 1.75A D5B	Active	Standard	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Surface Mount	E-MELF	D-5B	-65°C ~ 150°C
JAN1N6629US	Microsemi Corporation	DIODE GEN PURP 880V 1.4A D5B	Active	Standard	880V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 880V	40pF @ 10V, 1MHz	Surface Mount	E-MELF	D-5B	-65°C ~ 150°C
JAN1N6630US	Microsemi Corporation	DIODE GEN PURP 900V 1.4A E-MELF	Active	Standard	900V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 900V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JAN1N6631US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1.4A D5B	Active	Standard	1100V	1.4A	1.6V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	4µA @ 1100V	40pF @ 10V, 1MHz	Surface Mount	E-MELF	D-5B	-65°C ~ 150°C
JAN1N5802URS	Microsemi Corporation	DIODE GEN PURP 50V 1A APKG	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5804URS	Microsemi Corporation	DIODE GEN PURP 100V 1A APKG	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 175°C
JAN1N5806URS	Microsemi Corporation	DIODE GEN PURP 150V 1A APKG	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 175°C
1N4148UB	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N6625US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1A D5A	Active	Standard	1100V	1A	1.75V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 1100V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N5819UR-1	Microsemi Corporation	SCHOTTKY	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB (MELF, LL41)	-65°C ~ 125°C
1N4148UB2	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4148UB2R	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4148UBCA	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4148UBCC	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4148UBD	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5807URS	Microsemi Corporation	DIODE GEN PURP 50V 3A BPKG	Active	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-
JANTX1N5809URS	Microsemi Corporation	DIODE GEN PURP 100V 3A BPKG	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5811URS	Microsemi Corporation	DIODE GEN PURP 150V 3A BPKG	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N1341B	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N1341C	Microsemi Corporation	STANDARD RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-

제조 업체 다이오드 - 정류기 - 단일