Micron Technology Distributor - 메모리 - MT29F2T08CQHBBG2-3RES:B TR MT29F2T08CTCBBJ7-6R:B TR - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	메모리 유형	메모리 형식	과학 기술	메모리 크기	클럭 주파수	쓰기 사이클 시간 - 단어, 페이지	액세스 시간	메모리 인터페이스	전압 - 공급	작동 온도	실장 형	패키지 / 케이스	공급 업체 장치 패키지
MT29F2T08CQHBBG2-3RES:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CTCBBJ7-6R:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CTCCBJ7-6R:C TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CUHBBM4-3R:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CUHBBM4-3RES:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CVCBBG6-6R:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CWCBBJ7-6R:B TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 167MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CWCCBJ7-12:C TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F32G08ABCDBJ4-6IT:D TR	Micron Technology Inc.	IC FLASH 32G PARALLEL 166MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F32G08CBADAWP-M:D TR	Micron Technology Inc.	IC FLASH 32G PARALLEL 48TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F32G08CBADBWP-12:D TR	Micron Technology Inc.	IC FLASH 32G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F32G08CBADBWP-12IT:D TR	Micron Technology Inc.	IC FLASH 32G PARALLEL 83MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F384G08EBCBBJ4-37:B TR	Micron Technology Inc.	IC FLASH 384G PARALLEL 267MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	384Gb (48G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F384G08EBCBBJ4-37ES:B TR	Micron Technology Inc.	IC FLASH 384G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	384Gb (48G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F384G08EBHBBJ4-3R:B TR	Micron Technology Inc.	IC FLASH 384G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	384Gb (48G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F384G08EBHBBJ4-3RES:B TR	Micron Technology Inc.	IC FLASH 384G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	384Gb (48G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EQCBBG2-37:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EQCBBG2-37ES:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EQHBBG2-3R:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EQHBBG2-3RES:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EUCBBM4-37:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EUCBBM4-37ES:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EUHBBM4-3R:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EUHBBM4-3RES:B TR	Micron Technology Inc.	IC FLASH 3T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4G08ABADAH4-AATX:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MT29F4G08ABADAH4-AITX:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABADAH4-AT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4G08ABADAWP-AATX:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 48TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MT29F4G08ABADAWP-AITX:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 48TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABADAWP-AT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 48TSOP	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4G08ABBDAH4-AITX:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABBDAHC-AIT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABADAH4-AAT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MT29F4G16ABADAH4-AIT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABADAWP-AIT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 48TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABBDAH4-AIT:D TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4T08CTCBBM5-37ES:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08CTHBBM5-3R:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08CTHBBM5-3RES:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EYCBBG9-37:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EYCBBG9-37ES:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EYHBBG9-3R:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EYHBBG9-3RES:B TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUCBBH8-6:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 166MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUCBBH8-6IT:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 166MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F512G08AUCBBK8-6:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 166MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUEBBK8-12:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08CECBBJ4-37:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 267MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08CECBBJ4-37ES:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08CECBBJ4-5M:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 200MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	200MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-

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