부품 번호 제조업체 / 브랜드 간단한 설명 부품 상태다이오드 유형전압 - 직류 역전 (Vr) (최대)전류 - 평균 정류 (Io)전압 - 순방향 (Vf) (최대) @ If속도역 회복 시간 (trr)전류 - Vr의 역 누설커패시턴스 @ Vr, F실장 형패키지 / 케이스공급 업체 장치 패키지작동 온도 - 정션
Global Power Technologies Group DIODE SCHOTTKY 600V 24A TO247-2 ObsoleteSilicon Carbide Schottky600V24A (DC)1.7V @ 24ANo Recovery Time > 500mA (Io)0ns100µA @ 600V973pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1200V 81A TO247-2 ObsoleteSilicon Carbide Schottky1200V81A1.7V @ 30ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V1790pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 30A TO247-2 ObsoleteSilicon Carbide Schottky1200V30A (DC)1.7V @ 30ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V1790pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 600V 36A TO247-2 ObsoleteSilicon Carbide Schottky600V36A (DC)1.7V @ 36ANo Recovery Time > 500mA (Io)0ns100µA @ 600V1460pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 50A TO247-2 ObsoleteSilicon Carbide Schottky1200V50A (DC)1.7V @ 50ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V2984pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTT 1.2KV 60A TO247-2 ObsoleteSilicon Carbide Schottky1200V60A (DC)1.7V @ 60ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V3581pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1.7KV 20A TO247-2 ObsoleteSilicon Carbide Schottky1700V20A (DC)1.75V @ 20ANo Recovery Time > 500mA (Io)0ns40µA @ 1700V1624pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTKY 1.2KV 182A TO247-2 ObsoleteSilicon Carbide Schottky1200V182A (DC)1.8V @ 60ANo Recovery Time > 500mA (Io)
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500µA @ 1200V3809pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
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