GigaDevice Distributor - 메모리 - GD9FS1G8F2AMGI GD25Q256DBIGY - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	메모리 유형	메모리 형식	과학 기술	메모리 크기	클럭 주파수	쓰기 사이클 시간 - 단어, 페이지	액세스 시간	메모리 인터페이스	전압 - 공급	작동 온도	실장 형	패키지 / 케이스	공급 업체 장치 패키지
GD9FS1G8F2AMGI	GigaDevice Semiconductor (HK) Limited	SLC NAND FLASH	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
GD25Q256DBIGY	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	256Mb (32M x 8)	104MHz	50µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
GD5F2GQ4RF9IGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WLGA Exposed Pad	8-LGA (6x8)
GD5F2GQ4UEYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F2GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F2GQ4UEYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	120MHz	700µs	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD25S512MDBIGY	GigaDevice Semiconductor (HK) Limited	NOR FLASH	Active	Non-Volatile	FLASH	FLASH - NOR	512Mb (64M x 8)	104MHz	50µs, 2.4ms	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
GD5F4GQ4RBYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RCYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UBYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UCYIGY	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RBYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4RCYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UBYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
GD5F4GQ4UCYIGR	GigaDevice Semiconductor (HK) Limited	SPI NAND FLASH	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	120MHz	-	-	SPI - Quad I/O	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)

제조 업체 메모리