品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
STMicroelectronics IC DRIVER IGBT/MOSFET 14-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.5A, 2.3ANon-Inverting
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130ns, 75ns (Max)-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SO
STMicroelectronics IC DRIVER IGBT/MOSFET 14-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.5A, 2.3ANon-Inverting
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130ns, 75ns (Max)-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SO
STMicroelectronics IC DRIVER MOS/IGBT ADV 14SOIC ObsoleteHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.5A, 2.3ANon-Inverting
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130ns, 75ns (Max)-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SO
STMicroelectronics IC IGBT/MOSFET DRIVER ADV 8SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.3A, 1.7ANon-Inverting
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100ns, 100ns (Max)-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STMicroelectronics IC DRIVER GATE IGBT/MOSFET 8SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.3A, 1.7ANon-Inverting
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100ns, 100ns (Max)-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STMicroelectronics IC IGBT/MOSFET DRIVER ADV 8-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.3A, 1.7ANon-Inverting
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100ns, 100ns (Max)-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STMicroelectronics IC IGBT/MOSFET DRIVER ADV 8-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET12 V ~ 26 V0.8V, 4.2V1.3A, 1.7ANon-Inverting
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100ns, 100ns (Max)-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO