電圧 - 供給 is 3.3 V ~ 20 V - PMIC - ゲートドライバ Distributor - IR2110 IR2110-1PBF IR2110PBF - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	駆動構成	チャネルタイプ	ドライバ数	ゲートタイプ	電圧 - 供給	ロジック電圧 - VIL、VIH	電流 - ピーク出力（ソース、シンク）	入力方式	ハイサイド電圧 - 最大（ブートストラップ）	立ち上がり/立ち下がり時間（Typ）	動作温度	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ
IR2110	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 14-DIP	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IR2110-1PBF	Infineon Technologies	IC DRIVER HIGH/LOW SID 14DIP	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm), 13 Leads	14-PDIP
IR2110PBF	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 14DIP	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IR2110S	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 16-SOIC	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IR2110SPBF	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 16SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IR2110STR	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 16-SOIC	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IR2110STRPBF	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 16SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	500V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IR2113-1	Infineon Technologies	IC MOSFET DRVR HI/LO SIDE 14-DIP	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm), 13 Leads	14-PDIP
IR2113-2	Infineon Technologies	IC MOSFET DRVR HI/LO SIDE 16-DIP	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm), 14 Leads	16-PDIP
IR2113PBF	Infineon Technologies	IC MOSFET DVR HI/LO SIDE 14-DIP	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
IR2113SPBF	Infineon Technologies	IC MOSFET DRVR HI/LO SIDE 16SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IR2113STR	Infineon Technologies	IC MOSFET DRVR HI/LO SIDE 16SOIC	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IR2113STRPBF	Infineon Technologies	IC MOSFET DRVR HI/LO SIDE 16SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC

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