品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ObsoleteHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V80ns, 35ns-40°C ~ 150°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ActiveHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V80ns, 35ns-40°C ~ 150°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ActiveHalf-BridgeIndependent6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ActiveHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V90ns, 40ns125°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ObsoleteHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V90ns, 40ns125°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ObsoleteHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V90ns, 40ns125°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ObsoleteHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 3V200mA, 350mAInverting600V125ns, 50ns-40°C ~ 150°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP ObsoleteHalf-Bridge3-Phase6IGBT, N-Channel MOSFET11.5 V ~ 20 V0.8V, 3V200mA, 350mAInverting, Non-Inverting600V125ns, 50ns-40°C ~ 150°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER 3-PHASE BRIDGE 28-DIP ObsoleteHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2V250mA, 500mAInverting1200V90ns, 40ns125°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER 3-PHASE BRIDGE 28-DIP ActiveHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2V250mA, 500mAInverting1200V90ns, 40ns125°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP
Infineon Technologies IC DRIVER 3-PHASE BRIDGE 28-DIP ActiveHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2V250mA, 500mAInverting1200V90ns, 40ns125°C (TJ)Through Hole28-DIP (0.600", 15.24mm)28-PDIP