品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
ON Semiconductor IC GATE DVR SGL 1A EXTER SOT23-5 ActiveLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V
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1.4A, 1.4ANon-Inverting
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9ns, 8ns-40°C ~ 150°C (TJ)Surface MountSC-74A, SOT-753SOT-23-5
IXYS IC GATE DRIVER 4A 8-DIP ObsoleteLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 30 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-EP (5x4)
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL ENABLE 8DIP ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL ENABLE 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL ENABLE 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL IN/NON 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting, Non-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DIFF 8-SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting, Non-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A INV 8-SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS IC GATE DRIVER DUAL 4A 8-SOIC ObsoleteLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 30 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL NONINV 8DIP ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm), 6 Leads8-DIP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL NONINV 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL NONINV 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC