品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Infineon Technologies IC DRIVER HI SIDE RECHARGE 8-SOI ObsoleteHigh-SideSingle1N-Channel MOSFET5 V ~ 20 V1.4V, 3V1.5A, 1.5AInverting150V200ns, 100ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HI SIDE RECHARGE 8SOIC ObsoleteHigh-SideSingle1N-Channel MOSFET5 V ~ 20 V1.4V, 3V1.5A, 1.5AInverting150V200ns, 100ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DVR HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC HALF BRIDGE DRIVER 8SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC