メモリ - 集積回路（IC） - MT29VZZZBD8HQOWL-053 W.G8D TR MT40A1G16WBU-075E:B TR MT40A1G8PM-083E:A TR MT40A1G8SA-062E:E TR - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	メモリの種類	メモリフォーマット	技術	メモリー容量	クロック周波数	書き込みサイクル時間 - ワード、ページ	アクセス時間	メモリインターフェイス	電圧 - 供給	動作温度	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ
MT29VZZZBD8HQOWL-053 W.G8D TR	Micron Technology Inc.	ALL IN ONE MCP 5600G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT40A1G16WBU-075E:B TR	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.33GHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	16Gb (1G x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8PM-083E:A TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8SA-062E:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8SA-075:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-075E:D TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A256M16GE-083E AAT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A256M16GE-083E AIT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A256M16GE-083E AUT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A2G4SA-062E:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (2G x 4)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A2G4SA-075:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (2G x 4)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A2G4WE-075E:D TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (2G x 4)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A2G8FSE-083E:A TR	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.2GHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	16Gb (2G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A4G4FSE-083E:A TR	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.2GHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	16Gb (4G x 4)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A4G8KVA-083H:G TR	Micron Technology Inc.	IC DRAM 32G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	32Gb (4G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-062E IT:B TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-062E:B TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16LY-062E:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16LY-075:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-083E AAT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A512M8RH-083E AIT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-083E AUT:B TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT41DC11TW-V88A TR	Micron Technology Inc.	IC SDRAM DDR3 1G NANA NA	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT41K128M16JT-125 AUT:K TR	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT41K1G4RG-107:N TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (1G x 4)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K256M16TW-107 AUT:P TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	-	-	-
MT41K256M16TW-107 V:P TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K256M8DA-107 IT:K TR	Micron Technology Inc.	IC DRAM 2G PARALLEL 933MHZ	Last Time Buy	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K256M8DA-125 AUT:K TR	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K512M8DA-107 V:P TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K512M8DA-125:P TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 800MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	800MHz	-	13.5ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-083E:A TR	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Obsolete	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	1200MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-083F:A TR	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (32Mb x 36)	1200MHz	-	6.67ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-083E:A TR	Micron Technology Inc.	IC RLDRAM 3 1.125GBIT 64MX18 TBG	Obsolete	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	1200MHz	-	7.5ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-083F:A TR	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	1200MHz	-	6.67ns	Parallel	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-107E IT:A TR	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ	Active	Volatile	DRAM	DRAM	1.125Gb (64Mb x 18)	933MHz	-	8ns	Parallel	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT46V128M4CY-5B:J TR	Micron Technology Inc.	IC DRAM 512M PARALLEL 200MHZ	Active	Volatile	DRAM	SDRAM - DDR	512Mb (128M x 4)	200MHz	15ns	700ps	Parallel	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	-	-	-
MT52L1G64D8QC-107 WT:B TR	Micron Technology Inc.	IC DRAM 64G 933MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR3	64Gb (1G x 64)	933MHz	-	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2LZ-107 XT:B TR	Micron Technology Inc.	IC DRAM 16G 933MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	933MHz	-	-	-	1.2V	-30°C ~ 105°C (TC)	-	-	-
MT53B1024M64D8PM-062 WT:D TR	Micron Technology Inc.	IC DRAM 64G 1600MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	1600MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B128M32D1DS-053 AUT:A TR	Micron Technology Inc.	IC DRAM 4G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53B128M32D1DS-062 AAT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53B128M32D1DS-062 AIT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53B128M32D1DS-062 AUT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53B128M32D1NP-062 AAT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53B128M32D1NP-062 AIT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53B128M32D1NP-062 AUT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53B128M32D1NP-062 WT:A TR	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B1536M32D8QD-053 WT:D TR	Micron Technology Inc.	IC DRAM 6G 1866MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	6Gb (1.5G x 32)	1866MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B1DADS-DC TR	Micron Technology Inc.	IC SDRAM SPEC/CUSTOM LPDDR4	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-

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