品番 メーカー/ブランド 簡単な説明 部品ステータスメモリの種類メモリフォーマット技術メモリー容量クロック周波数書き込みサイクル時間 - ワード、ページアクセス時間メモリインターフェイス電圧 - 供給動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (128M x 4)267MHz15ns500psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (128M x 4)333MHz15ns450psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (128M x 4)200MHz15ns600psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)400MHz15ns400psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)267MHz15ns500psParallel1.7 V ~ 1.9 V-40°C ~ 95°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)267MHz15ns500psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)267MHz15ns500psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)333MHz15ns450psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)200MHz15ns600psParallel1.7 V ~ 1.9 V-40°C ~ 95°C (TC)Surface Mount60-FBGA60-FBGA
Micron Technology Inc. IC DRAM 512M PARALLEL 60FBGA ObsoleteVolatileDRAMSDRAM - DDR2512Mb (64M x 8)200MHz15ns600psParallel1.7 V ~ 1.9 V0°C ~ 85°C (TC)Surface Mount60-FBGA60-FBGA