品番 メーカー/ブランド 簡単な説明 部品ステータスダイオードタイプ電圧 - DC逆(Vr)(最大)電流 - 平均整流(Io)電圧 - フォワード(Vf)(最大)@ If速度逆回復時間(trr)電流 - 逆リーク(Vr)容量Vr、F取付タイプパッケージ/ケースサプライヤデバイスパッケージ動作温度 - ジャンクション
ON Semiconductor DIODE GEN PURP 600V 8A TO220F ActiveStandard600V8A2.4V @ 8AFast Recovery =< 500ns, > 200mA (Io)30ns100µA @ 600V
-
Through HoleTO-220-2 Full PackTO-220F-2L-55°C ~ 150°C
ON Semiconductor DIODE SCHOTTKY 100V 30A TO220AB ActiveSchottky100V30A950mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-
Through HoleTO-220-3TO-220AB-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 20A ITO220AC ActiveSchottky45V20A (DC)660mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Through HoleTO-220-2 Full Pack, Isolated TabITO-220AC200°C (Max)
Infineon Technologies DIODE GEN PURP 1.2KV 50A TO263-3 ActiveStandard1200V50A (DC)2.15V @ 30AFast Recovery =< 500ns, > 200mA (Io)243ns100µA @ 1200V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 10A TO220F ActiveStandard600V10A2.2V @ 10AFast Recovery =< 500ns, > 200mA (Io)58ns100µA @ 600V
-
Through HoleTO-220-2 Full PackTO-220F-2L-65°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 60V 20A TO220AC ActiveSchottky60V20A580mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
125µA @ 60V
-
Through HoleTO-220-2TO-220AC150°C (Max)
Infineon Technologies DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A1.7V @ 15AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 600V
-
Through HoleTO-220-2TO-220AC-55°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 25V 10A TO220AC ActiveSchottky25V10A460mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 25V
-
Through HoleTO-220-2TO-220AC150°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 15A D2PAK ActiveStandard600V15A1.07V @ 15AFast Recovery =< 500ns, > 200mA (Io)210ns15µA @ 600V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 30A ITO220AC ActiveSchottky45V30A (DC)700mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Through HoleTO-220-2 Full Pack, Isolated TabITO-220AC200°C (Max)
Power Integrations DIODE GEN PURP 300V 10A TO220AC ActiveStandard300V10A1.9V @ 10AFast Recovery =< 500ns, > 200mA (Io)12.6ns25µA @ 300V
-
Through HoleTO-220-2TO-220AC150°C (Max)
ON Semiconductor DIODE GEN PURP 600V 30A TO220AC ActiveStandard600V30A2.1V @ 30AFast Recovery =< 500ns, > 200mA (Io)45ns250µA @ 600V
-
Through HoleTO-220-2TO-220AC-65°C ~ 175°C
Power Integrations DIODE GEN PURP 300V 16A TO220AC ActiveStandard300V16A1.9V @ 16AFast Recovery =< 500ns, > 200mA (Io)13ns25µA @ 300V
-
Through HoleTO-220-2TO-220AC150°C (Max)
STMicroelectronics DIODE GEN PURP 1.2KV 8A TO220FP ActiveStandard1200V8A2.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)100ns8µA @ 1200V
-
Through HoleTO-220-2 Full Pack, Isolated TabTO-220FPAC175°C (Max)
ON Semiconductor DIODE SCHOTTKY 15V 25A D2PAK ActiveSchottky15V25A450mV @ 25AFast Recovery =< 500ns, > 200mA (Io)
-
15mA @ 15V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK100°C (Max)
STMicroelectronics DIODE GEN PURP 200V 12A TO220AC ActiveStandard200V12A1.1V @ 12AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V
-
Through HoleTO-220-2TO-220AC175°C (Max)
Littelfuse Inc. DIODE GEN PURP 400V 12.7A TO220 ActiveStandard400V12.7A
-
Standard Recovery >500ns, > 200mA (Io)4µs10µA @ 400V
-
Through HoleTO-220-3 Isolated TabTO-220AB-L-40°C ~ 125°C
Infineon Technologies DIODE GEN PURP 650V 60A TO220-2 ActiveStandard650V60A (DC)1.7V @ 30AFast Recovery =< 500ns, > 200mA (Io)64ns40µA @ 650V
-
Through HoleTO-220-2PG-TO220-2-1-40°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 16A ITO220AC ActiveStandard600V16A1.5V @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V
-
Through HoleTO-220-2 Full Pack, Isolated TabITO-220AC-65°C ~ 150°C
Littelfuse Inc. DIODE GEN PURP 600V 12.7A TO220 ActiveStandard600V12.7A
-
Standard Recovery >500ns, > 200mA (Io)4µs10µA @ 600V
-
Through HoleTO-220-3 Isolated TabTO-220AB-L-40°C ~ 125°C
IXYS DIODE GEN PURP 1.6KV 30A TO220AC ActiveStandard1600V30A1.29V @ 30AStandard Recovery >500ns, > 200mA (Io)
-
40µA @ 1600V10pF @ 400V, 1MHzThrough HoleTO-220-2TO-220AC-40°C ~ 175°C
Littelfuse Inc. DIODE GEN PURP 800V 12.7A TO220 ActiveStandard800V12.7A
-
Standard Recovery >500ns, > 200mA (Io)4µs20µA @ 800V
-
Through HoleTO-220-3 Isolated TabTO-220AB-L-40°C ~ 125°C
STMicroelectronics DIODE GEN PURP 1KV 12A TO220AC ActiveStandard1000V12A2V @ 12AFast Recovery =< 500ns, > 200mA (Io)90ns10µA @ 1000V
-
Through HoleTO-220-2TO-220AC-40°C ~ 175°C
STMicroelectronics DIODE GEN PURP 600V 12A TO220AC ActiveStandard600V12A2.9V @ 12AFast Recovery =< 500ns, > 200mA (Io)45ns45µA @ 600V
-
Through HoleTO-220-2 Insulated, TO-220ACTO-220AC ins175°C (Max)
STMicroelectronics DIODE GEN PURP 1.2KV 8A TO220LNS ActiveStandard1200V8A2.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)100ns8µA @ 1200V
-
Through HoleTO-220-2 Insulated, TO-220ACTO-220AC ins175°C (Max)
STMicroelectronics DIODE GEN PURP 1KV 12A TO220AC ActiveStandard1000V12A2V @ 12AFast Recovery =< 500ns, > 200mA (Io)90ns10µA @ 1000V
-
Through HoleTO-220-2TO-220AC175°C (Max)
STMicroelectronics DIODE GEN PURP 1.2KV 15A D2PAK ActiveStandard1200V15A2.1V @ 15AFast Recovery =< 500ns, > 200mA (Io)105ns15µA @ 1200V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
IXYS DIODE GEN PURP 1.6KV 30A TO263 ActiveStandard1600V30A1.29V @ 30AStandard Recovery >500ns, > 200mA (Io)
-
40µA @ 1600V10pF @ 400V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-40°C ~ 175°C
ON Semiconductor DIODE SCHOTTKY 30V 40A D2PAK ActiveSchottky30V40A550mV @ 40AFast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 30V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 8A TO252AA ActiveStandard1200V8A1.1V @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 1200V
-
Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-PAK (TO-252AA)-55°C ~ 150°C
Infineon Technologies DIODE GEN PURP 1.2KV 50A TO220-2 ActiveStandard1200V50A (DC)2.15V @ 30AFast Recovery =< 500ns, > 200mA (Io)243ns100µA @ 1200V
-
Through HoleTO-220-2PG-TO220-2-2-55°C ~ 150°C
IXYS DIODE GEN PURP 600V 37A TO263AB ActiveStandard600V37A1.6V @ 37AFast Recovery =< 500ns, > 200mA (Io)50ns100µA @ 600V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB-40°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 650V 6A TO220AC ActiveSilicon Carbide Schottky650V6A (DC)1.55V @ 6ANo Recovery Time > 500mA (Io)0ns120µA @ 600V219pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
IXYS DIODE GEN PURP 600V 30A TO247AD ActiveStandard600V30A1.6V @ 30AFast Recovery =< 500ns, > 200mA (Io)35ns250µA @ 600V
-
Through HoleTO-247-2TO-247AD-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL ActiveStandard200V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)150ns500nA @ 200V45pF @ 12V, 1MHzThrough HoleA, Axial
-
-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 70A DO203AB ActiveStandard400V70A1.35V @ 220AStandard Recovery >500ns, > 200mA (Io)
-
15mA @ 400V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 600V 3A AXIAL ActiveStandard600V3A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 600V
-
Through HoleB, Axial
-
-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 40A D-55 ActiveStandard100V40A
-
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 100V
-
Chassis MountD-55 T-ModuleD-55
-
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 150A DO205 ActiveStandard1000V150A1.47V @ 600AStandard Recovery >500ns, > 200mA (Io)
-
15mA @ 1000V
-
Chassis, Stud MountDO-205AA, DO-8, StudDO-205AA (DO-8)-40°C ~ 180°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 40A D-55 ActiveStandard1000V40A
-
Fast Recovery =< 500ns, > 200mA (Io)500ns100µA @ 1000V
-
Chassis MountD-55 T-ModuleD-55
-
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 150A DO205AA ActiveStandard400V150A1.33V @ 471AStandard Recovery >500ns, > 200mA (Io)
-
35mA @ 400V
-
Chassis, Stud MountDO-205AA, DO-8, StudDO-205AA (DO-8)-40°C ~ 200°C
Vishay Semiconductor Diodes Division DIODE GP 1.2KV 100A ADD-A-PAK ActiveStandard1200V100A1.55V @ 314AStandard Recovery >500ns, > 200mA (Io)
-
10mA @ 1200V
-
Chassis MountADD-A-PAK (3)ADD-A-PAK®-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 300A DO205AB ActiveStandard400V300A1.4V @ 942AStandard Recovery >500ns, > 200mA (Io)
-
40mA @ 400V
-
Stud MountDO-205AB, DO-9, StudDO-205AB, DO-9-65°C ~ 200°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 85A D-55 ActiveStandard1000V85A
-
Fast Recovery =< 500ns, > 200mA (Io)500ns20mA @ 1000V
-
Chassis MountD-55 T-ModuleD-55
-
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 400A DO205 ActiveStandard1200V400A1.62V @ 1500AStandard Recovery >500ns, > 200mA (Io)
-
15mA @ 1200V
-
Stud MountDO-205AB, DO-9, StudDO-205AB, DO-9-40°C ~ 200°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 400A DO205 ActiveStandard1200V400A1.62V @ 1500AStandard Recovery >500ns, > 200mA (Io)
-
15mA @ 1200V
-
Stud MountDO-205AB, DO-9, StudDO-205AB, DO-9-40°C ~ 200°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.6KV 400A DO205 ActiveStandard1600V400A1.62V @ 1500AStandard Recovery >500ns, > 200mA (Io)
-
15mA @ 1600V
-
Stud MountDO-205AB, DO-9, StudDO-205AB, DO-9-40°C ~ 200°C
IXYS DIODE GEN PURP 3.2KV 22.9A UGE ActiveStandard3200V22.9A2.72V @ 55AStandard Recovery >500ns, > 200mA (Io)
-
2mA @ 3200V
-
Chassis MountUGEUGE
-
Microsemi Corporation DIODE GEN PURP 200V 500A LP4 ActiveStandard200V500A1.1V @ 500AFast Recovery =< 500ns, > 200mA (Io)70ns2.5mA @ 200V
-
Chassis MountLP4LP4
-
Microsemi Corporation DIODE GEN PURP 1.2KV 450A LP4 ActiveStandard1200V450A2.5V @ 500AFast Recovery =< 500ns, > 200mA (Io)110ns2.5mA @ 1200V
-
Chassis MountLP4LP4
-