品番 メーカー/ブランド 簡単な説明 部品ステータスIGBTタイプ構成電圧 - コレクタエミッタ破壊(最大)電流 - コレクタ(Ic)(最大)電力 - 最大Vce(on)(Max)@ Vge、Ic電流 - コレクタ遮断(最大)入力容量(Cies)@ Vce入力NTCサーミスタ動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 15A IMS-2 Obsolete
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Three Phase Inverter600V27A63W1.6V @ 15V, 27A250µA2.2nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT FAST 250V 400A INT-A-PAK Obsolete
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Half Bridge250V400A1350W1.6V @ 15V, 400A500µA36nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis MountDual INT-A-PAK (3 + 8)Dual INT-A-PAK
Vishay Semiconductor Diodes Division IGBT UFAST 600V 100A SOT227 Obsolete
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Single600V200A500W1.9V @ 15V, 100A1mA16.5nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
Vishay Semiconductor Diodes Division IGBT STD 600V 100A SOT227 Obsolete
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Single600V200A630W1.3V @ 15V, 100A1mA16.25nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
Vishay Semiconductor Diodes Division IGBT WARP 600V 114A MTP ObsoletePTHalf Bridge600V114A658W3.2V @ 15V, 100A400µA7.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP Module12-MTP
Vishay Semiconductor Diodes Division IGBT UFAST 600V 100A MTP Obsolete
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Single600V100A445W2.55V @ 15V, 100A250µA14.7nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount10-MTP10-MTP
Vishay Semiconductor Diodes Division MODULE IGBT 1200V 35A ECONO2 6PK ObsoleteNPTThree Phase Inverter1200V50A284W3V @ 15V, 50A100µA3.475nF @ 30VStandardNo150°C (TJ)Chassis MountECONO2
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