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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A MPG06 |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AC |
Active | Schottky | 100V | 2A | 910mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 38pF @ 10V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
Active | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | Surface Mount | DO-219AB | DO-219AB (SMF) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MICROSMP |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 1µA @ 600V | 5pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
Active | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 100V | 70pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 700MA DO219AB |
Active | Standard | 1000V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
Active | Standard | 100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
Active | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
Active | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
Active | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
Active | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
Active | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
Active | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO221AC |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 400V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO221AC |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 400V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO221AC |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 600V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO221AC |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 600V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO221AC |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 800V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO221AC |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 800V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO221AC |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.47µs | 5µA @ 1000V | 7.9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 100V 500MA DO219AB |
Active | Standard | 100V | 500mA | 1.15V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 20V 1.5A DO214AC |
Active | Standard | 20V | 1.5A | 445mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 30V 1.5A DO214AC |
Active | Standard | 30V | 1.5A | 445mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1.5A DO214AC |
Active | Schottky | 20V | 1.5A | 445mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1.5A DO214AC |
Active | Schottky | 30V | 1.5A | 445mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
Active | Standard | 100V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 6.8pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
Active | Standard | 100V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 6.8pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
Active | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO219AB |
Active | Schottky | 60V | 2A | 780mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 60V | 90pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 800V 700MA DO219AB |
Active | Standard | 800V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 800V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
Active | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
Active | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 100V 700MA DO219AB |
Active | Standard | 100V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 700MA DO219AB |
Active | Standard | 200V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 100V 500MA DO219AB |
Active | Standard | 100V | 500mA | 1.15V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 700MA DO219AB |
Active | Standard | 200V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 500MA DO219AB |
Active | Standard | 400V | 500mA | 1.15V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |
Active | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A MPG06 |
Active | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A MPG06 |
Active | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |