Taiwan Semiconductor Distributor - ダイオード - 整流器 - シングル - SK19B R5G SS210HR5G - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
SK19B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO214AA	Active	Schottky	90V	1A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS210HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AA	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS215 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO214AA	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS34L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SR309 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO201AD	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR310 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO201AD	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS215HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO214AA	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS34LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS36LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS34LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS34LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS36LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR309 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO201AD	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR309 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO201AD	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR310 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO201AD	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES2HM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 2A DO214AA	Active	Standard	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UG06A R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 600MA TS-1	Active	Standard	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06B R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 600MA TS-1	Active	Standard	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06C R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 600MA TS-1	Active	Standard	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06D R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 600MA TS-1	Active	Standard	200V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06A A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 600MA TS-1	Active	Standard	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06B A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 600MA TS-1	Active	Standard	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06C A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 600MA TS-1	Active	Standard	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06D A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 600MA TS-1	Active	Standard	200V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06A A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 600MA TS-1	Active	Standard	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06B A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 600MA TS-1	Active	Standard	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06C A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 600MA TS-1	Active	Standard	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06D A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 600MA TS-1	Active	Standard	200V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES2A M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2B M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2C M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AA	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2D M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2F M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO214AA	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2G M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ESH2B M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	2µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ESH2C M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AA	Active	Standard	150V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	2µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ESH2D M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	2µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
HS2B R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2F R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO214AA	Active	Standard	300V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2G R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR160 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AC	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
ES2AHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2BHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2CHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AA	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2DHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2FHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO214AA	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C

のメーカー ダイオード - 整流器 - シングル

のメーカーダイオード - 整流器 - シングル