Taiwan Semiconductor Distributor - ダイオード - 整流器 - シングル - SS26L RFG SS23L RUG - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
SS26L RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT17G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HER201G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER201G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
BYG23M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO214AC	Active	Standard	-	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	1µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG23M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO214AC	Active	Standard	-	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	1µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2KHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	Active	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SF2L6G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS16LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SK210A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AC	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK215A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO214AC	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK29A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS115 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO214AC	Active	Schottky	150V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
1N5400GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5406GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5407GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD	Active	Standard	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5408GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO201AD	Active	Standard	-	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5400GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5401GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S3AB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	Active	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3BB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	Active	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3DB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2G M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2J M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2K M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	Active	Standard	800V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2M M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	Active	Standard	-	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2G R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1JLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SRT115 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	Active	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES2BA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AC	Active	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2CA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AC	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2DA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2FA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO214AC	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2GA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AC	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ESH2BA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH2CA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	Active	Standard	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH2DA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
SRT115 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	Active	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT115 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	Active	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

のメーカー ダイオード - 整流器 - シングル

のメーカーダイオード - 整流器 - シングル