品番 メーカー/ブランド 簡単な説明 部品ステータスIGBTタイプ電圧 - コレクタエミッタ破壊(最大)電流 - コレクタ(Ic)(最大)電流 - コレクタパルス(Icm)Vce(on)(Max)@ Vge、Ic電力 - 最大スイッチングエネルギー入力方式ゲートチャージTd(オン/オフ)@ 25℃テスト条件逆回復時間(trr)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Microsemi Corporation IGBT 1200V 134A 543W TO-247 ActiveNPT, Trench Field Stop1200V134A150A2.1V @ 15V, 50A543W4495µJ (off)Standard315nC28ns/320ns800V, 50A, 2.2 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 1200V 117A 694W TO247 ActiveNPT1200V117A200A3.2V @ 15V, 50A694W2.14mJ (on), 1.48mJ (off)Standard445nC28ns/237ns600V, 50A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
Microsemi Corporation IGBT 600V 143A 625W TO247 ActivePT600V143A240A2.5V @ 15V, 47A625W840µJ (on), 751µJ (off)Standard230nC23ns/158ns400V, 47A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 900V 117A 500W TO-247 ActivePT900V117A193A3.1V @ 15V, 38A500W1192µJ (on), 1088µJ (off)Standard162nC18ns/131ns600V, 38A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 1200V 170A 962W TO264 ActiveNPT1200V170A340A3.2V @ 15V, 85A962W6mJ (on), 3.8mJ (off)Standard660nC43ns/300ns600V, 85A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
Microsemi Corporation IGBT 1200V 96A 543W TO247 ActivePT1200V96A140A3.9V @ 15V, 35A543W750µJ (on), 680µJ (off)Standard150nC16ns/94ns600V, 35A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 1200V 64A 357W TMAX ActiveNPT1200V64A75A3V @ 15V, 25A357W1.315µJ (on), 1.515µJ (off)Standard170nC14ns/185ns800V, 25A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 1200V 96A 543W TMAX ActivePT1200V96A140A3.9V @ 15V, 35A543W750µJ (on), 680µJ (off)Standard150nC16ns/95ns600V, 35A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 1200V 160A 961W TO264 ActiveNPT1200V160A280A3.2V @ 15V, 70A961W3.82mJ (on), 2.58mJ (off)Standard544nC33ns/278ns600V, 70A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
Microsemi Corporation IGBT 600V 42A 184W TO247 ActiveNPT600V42A45A2.5V @ 15V, 15A184W150µJ (on), 215µJ (off)Standard75nC6ns/105ns400V, 15A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 40A 136W TO247 ActiveTrench Field Stop600V40A60A1.9V @ 15V, 20A136W230µJ (on), 580µJ (off)Standard120nC9ns/140ns400V, 20A, 4.3 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 63A 203W TO247 ActiveTrench Field Stop600V63A90A1.9V @ 15V, 30A203W525µJ (on), 700µJ (off)Standard165nC12ns/155ns400V, 30A, 4.3 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 42A 184W TO247 ActiveNPT600V42A45A2.5V @ 15V, 15A184W150µJ (on), 215µJ (off)Standard75nC6ns/105ns400V, 15A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 1200V 36A 250W TO247 ActiveNPT1200V36A45A3.6V @ 15V, 15A250W585µJ (on), 260µJ (off)Standard105nC10ns/85ns800V, 15A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 63A 203W TO247 ActiveTrench Field Stop600V63A90A1.9V @ 15V, 30A203W525µJ (on), 700µJ (off)Standard165nC12ns/155ns400V, 30A, 4.3 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 900V 63A 290W TO-247 ActivePT900V63A105A3.1V @ 15V, 18A290W642µJ (on), 382µJ (off)Standard84nC12ns/104ns600V, 18A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 56A 250W TO247 Not For New DesignsPT600V56A65A2.7V @ 15V, 15A250W130µJ (on), 121µJ (off)Standard55nC8ns/29ns400V, 15A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 107A 366W TO247 ActiveTrench Field Stop600V107A150A1.85V @ 15V, 50A366W1185µJ (on), 1565µJ (off)Standard325nC20ns/230ns400V, 50A, 4.3 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 56A 250W TO247 Not For New DesignsPT600V56A65A2.7V @ 15V, 15A250W130µJ (on), 120µJ (off)Standard55nC8ns/29ns400V, 15A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 107A 366W TO247 ActiveTrench Field Stop600V107A150A1.85V @ 15V, 50A366W1185µJ (on), 1565µJ (off)Standard325nC20ns/230ns400V, 50A, 4.3 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 96A 416W TO-247 ActivePT600V96A161A2.5V @ 15V, 32A416W534µJ (on), 466µJ (off)Standard158nC17ns/112ns400V, 32A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 900V 43A 250W TO247 Not For New DesignsPT900V43A60A3.9V @ 15V, 15A250W200µJ (off)Standard60nC9ns/33ns600V, 15A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 1200V 41A 250W TO247 ActivePT1200V41A50A3.9V @ 15V, 13A250W115µJ (on), 165µJ (off)Standard55nC9ns/28ns600V, 13A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 1200V 45A 195W TO247 ActiveTrench Field Stop1200V45A45A2.1V @ 15V, 15A195W410µJ (on), 950µJ (off)Standard90nC10ns/150ns800V, 15A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 64A 250W TO247 ActiveNPT600V64A110A2.5V @ 15V, 30A250W525µJ (on), 600µJ (off)Standard145nC12ns/225ns400V, 30A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation INSULATED GATE BIPOLAR TRANSISTO ActiveNPT650V118A224A2.4V @ 15V, 45A543W
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Standard203nC15ns/100ns433V, 45A, 4.3 Ohm, 15V80ns-55°C ~ 150°C (TJ)Through HoleTO-247-3T-MAX™ [B2]
Microsemi Corporation IGBT 600V 78A 337W TO-247 ActivePT600V78A130A2.5V @ 15V, 26A337W409µJ (on), 258µJ (off)Standard128nC16ns/84ns400V, 26A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 93A 415W TO247 ActiveNPT600V93A195A3.15V @ 15V, 50A415W755µJ (off)Standard235nC16ns/225ns400V, 50A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 54A 250W TO247 Not For New DesignsNPT600V54A113A3.15V @ 15V, 30A250W570µJ (off)Standard145nC16ns/360ns400V, 30A, 9.1 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
Microsemi Corporation IGBT 1200V 41A 250W TO247 ActivePT1200V41A50A3.9V @ 15V, 13A250W115µJ (on), 165µJ (off)Standard55nC9ns/28ns600V, 13A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 650V 134A 595W TO-247 ActiveNPT650V134A260A2.4V @ 15V, 70A595W1.51mJ (on), 1.46mJ (off)Standard305nC19ns/170ns433V, 70A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
Microsemi Corporation IGBT 600V 96A 416W TO247 ActivePT600V96A161A2.5V @ 15V, 32A416W534µJ (on), 466µJ (off)Standard28nC17ns/112ns400V, 32A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 56A 250W TO247 Not For New DesignsPT600V56A65A2.7V @ 15V, 15A250W130µJ (on), 121µJ (off)Standard55nC8ns/29ns400V, 15A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
Microsemi Corporation INSULATED GATE BIPOLAR TRANSISTO ActiveNPT650V134A280A2.4V @ 15V, 70A595W
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Standard305nC18ns/170ns433V, 70A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3T-MAX™ [B2]
Microsemi Corporation IGBT 1200V 88A 500W D3PAK ActiveNPT1200V88A160A3.2V @ 15V, 40A500W1.38mJ (on), 906µJ (off)Standard210nC22ns/163ns600V, 40A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD3Pak
Microsemi Corporation IGBT 900V 117A 500W TO247 ActivePT900V117A193A3.1V @ 15V, 38A500W1857µJ (on), 2311µJ (off)Standard162nC18ns/131ns600V, 38A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 229A 625W TMAX ActiveTrench Field Stop600V229A300A1.85V @ 15V, 100A625W4.7mJ (on), 2.675mJ (off)Standard600nC31ns/310ns400V, 100A, 1 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 900V 72A 417W TO247 Not For New DesignsPT900V72A110A3.9V @ 15V, 25A417W370µJ (off)Standard110nC13ns/55ns600V, 40A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 1200V 67A 272W TMAX ActiveNPT, Trench Field Stop1200V67A75A2.1V @ 15V, 25A272W2.15µJ (off)Standard155nC22ns/280ns800V, 25A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 600V 100A 463W TMAX ActivePT600V100A120A2.7V @ 15V, 30A463W260µJ (on), 250µJ (off)Standard90nC13ns/55ns400V, 30A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3T-MAX™
Microsemi Corporation IGBT 1200V 117A 694W TO264 ActiveNPT1200V117A200A3.2V @ 15V, 50A694W2.14mJ (on), 1.48mJ (off)Standard445nC28ns/237ns600V, 50A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
Microsemi Corporation IGBT 600V 100A 463W TO264 Not For New DesignsPT600V100A120A2.7V @ 15V, 30A463W260µJ (on), 250µJ (off)Standard90nC13ns/55ns400V, 30A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
Microsemi Corporation IGBT 600V 93A 415W TO247 ActiveNPT600V93A195A3.15V @ 15V, 50A415W755µJ (off)Standard235nC16ns/225ns400V, 50A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
Microsemi Corporation IGBT 600V 121A 520W TO-247 ActivePT600V121A202A2.5V @ 15V, 40A520W715µJ (on), 607µJ (off)Standard198nC21ns/133ns400V, 40A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3 Variant
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Microsemi Corporation IGBT 600V 121A 520W TO-264 ActivePT600V121A202A2.5V @ 15V, 40A520W715µJ (on), 607µJ (off)Standard198nC21ns/133ns400V, 40A, 4.7 Ohm, 15V22ns-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264 [L]
Microsemi Corporation IGBT 1200V 69A 417W TO247 ActivePT1200V69A90A3.9V @ 15V, 25A417W500µJ (on), 438µJ (off)Standard110nC12ns/70ns600V, 25A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 600V 100A 463W TO247 Not For New DesignsPT600V100A100A2.7V @ 15V, 30A463W260µJ (on), 250µJ (off)Standard90nC13ns/55ns400V, 30A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
Microsemi Corporation IGBT 900V 117A 500W TO-264 ActivePT900V117A193A3.1V @ 15V, 38A500W1192µJ (on), 1088µJ (off)Standard162nC18ns/131ns600V, 38A, 4.7 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264 [L]
Microsemi Corporation IGBT 600V 100A 543W D3PAK Not For New DesignsPT600V100A160A2.7V @ 15V, 40A543W385µJ (on), 352µJ (off)Standard135nC20ns/64ns400V, 40A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Surface MountTO-268-3, D³Pak (2 Leads + Tab), TO-268AAD3 [S]
Microsemi Corporation IGBT 1200V 160A 961W TO247 ActiveNPT1200V160A280A3.2V @ 15V, 70A961W3.82mJ (on), 2.58mJ (off)Standard544nC33ns/278ns600V, 70A, 4.3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
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