Micron Technology Distributor - メモリ - MT29RZ4B4DZZMGWD-18I.80C MT29RZ4C4DZZMGGM-18W.80C - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	メモリの種類	メモリフォーマット	技術	メモリー容量	クロック周波数	書き込みサイクル時間 - ワード、ページ	アクセス時間	メモリインターフェイス	電圧 - 供給	動作温度	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ
MT29RZ4B4DZZMGWD-18I.80C	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (128M x 32)(NAND), 4G (128M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-40°C ~ 85°C (TA)	-	-	-
MT29RZ4C4DZZMGGM-18W.80C	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-25°C ~ 85°C (TA)	-	-	-
MT29RZ4C4DZZMGGM-18W.80U	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Obsolete	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-25°C ~ 85°C (TA)	-	-	-
MT29RZ4C4DZZMGMF-18W.80C	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-25°C ~ 85°C (TA)	-	-	-
MT29RZ4C8DZZMHAN-18W.80D	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-25°C ~ 85°C (TA)	-	-	-
MT29RZ4C8DZZMHAN-18W.80Y	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Obsolete	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-25°C ~ 85°C (TA)	-	-	-
MT29TZZZ4D4BKERL-125 W.94M	Micron Technology Inc.	MLC EMMC/LPDDR2 36G	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ5D6EKFRL-107 W.96R	Micron Technology Inc.	MLC EMMC/LPDDR3 144G	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ5D6JKFRL-107 W.96R	Micron Technology Inc.	MLC EMMC/LPDDR3 144G	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ7D6EKKFB-107 W.96V	Micron Technology Inc.	MLC EMMC/LPDDR3 152G	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ7D6JKKFB-107 W.96V	Micron Technology Inc.	MLC EMMC/LPDDR3 152G	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ7D7EKKBT-107 W.97V	Micron Technology Inc.	MLC EMMC/LPDDR3 280G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ8D5JKETS-107 W.95Q	Micron Technology Inc.	MLC EMMC/LPDDR3 72G	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ8D5JKEZB-107 W.95Q	Micron Technology Inc.	MLC EMMC/LPDDR3 72G	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT38M4041A3034EZZI.XK6	Micron Technology Inc.	IC FLASH RAM 256M PARALLEL	Obsolete	Non-Volatile	FLASH, RAM	FLASH, PSRAM	256Mb (16M x 16), 128M (8M x 16)	133MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT38M5041A3034EZZI.XR6	Micron Technology Inc.	IC FLASH RAM 512M PARALLEL	Obsolete	Non-Volatile	FLASH, RAM	FLASH, PSRAM	512Mb (32M x 16), 128M (8M x 16)	133MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT38M5071A3063RZZI.YE8	Micron Technology Inc.	IC FLASH RAM 512M PARALLEL	Obsolete	Non-Volatile	FLASH, RAM	FLASH, PSRAM	512Mb (32M x 16), 512Mb (32M x 16)	133MHz	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT38W1011A90YZQXZI.XB8	Micron Technology Inc.	PARALLEL/PSRAM 48M	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT38W2011A90YZQXZI.X68	Micron Technology Inc.	PARALLEL/PSRAM 80M	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT40A1G16WBU-083E:B	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	16Gb (1G x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G4RH-075E:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (1G x 4)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-075E AIT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-075E IT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-075E:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-083E AAT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A1G8WE-083E AIT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-083E AUT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A256M16GE-062E IT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.6GHZ	Last Time Buy	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A256M16GE-075E AAT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A256M16GE-075E AIT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A256M16GE-075E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A256M16GE-075E IT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A2G4WE-075E:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (2G x 4)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A2G4WE-083E:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (2G x 4)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A2G8FSE-093E:A	Micron Technology Inc.	IC DRAM 16G PARALLEL 1067MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	16Gb (2G x 8)	1067MHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A2G8NRE-083E:B	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	16Gb (2G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A4G4NRE-075E:B	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	16Gb (4G x 4)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A4G4NRE-083E:B	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	16Gb (4G x 4)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-075E AIT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-075E IT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-075E:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-083E AAT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A512M16JY-083E AIT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-083E AUT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M8RH-062E:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.6GHZ	Last Time Buy	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.6GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-075E AAT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A512M8RH-075E AIT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-075E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M8RH-075E:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ	Last Time Buy	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT41J64M16TW-093:J	Micron Technology Inc.	IC DRAM 1G PARALLEL 1067MHZ	Active	Volatile	DRAM	SDRAM - DDR3	1Gb (64M x 16)	1067MHz	-	-	Parallel	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	-	-	-

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