Numero di parte Produttore / Marca Breve descrizione Stato parteConfigurazione guidataTipo di canaleNumero di driverGate TypeTensione - FornituraTensione logica - VIL, VIHCorrente - Uscita picco (sorgente, lavello)Tipo di inputTensione lato alto - Max (Bootstrap)Rise / Fall Time (Typ)temperatura di esercizioTipo di montaggioPacchetto / casoPacchetto dispositivo fornitore
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC DRIVER HIGH/LOW SID 14DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm), 13 Leads14-PDIP
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16-SOIC ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16-SOIC ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 14-DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm), 13 Leads14-PDIP
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16-DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole16-DIP (0.300", 7.62mm), 14 Leads16-PDIP
Infineon Technologies IC MOSFET DVR HI/LO SIDE 14-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16SOIC ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V25ns, 17ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC