Rise / Fall Time (Typ) is 200ns, 100ns - PMIC - Gate driver Distributor - IR20153SPBF IR20153STRPBF IR2304

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Configurazione guidata	Tipo di canale	Numero di driver	Gate Type	Tensione - Fornitura	Tensione logica - VIL, VIH	Corrente - Uscita picco (sorgente, lavello)	Tipo di input	Tensione lato alto - Max (Bootstrap)	Rise / Fall Time (Typ)	temperatura di esercizio	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore
IR20153SPBF	Infineon Technologies	IC DRIVER HI SIDE RECHARGE 8-SOI	Obsolete	High-Side	Single	1	N-Channel MOSFET	5 V ~ 20 V	1.4V, 3V	1.5A, 1.5A	Inverting	150V	200ns, 100ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR20153STRPBF	Infineon Technologies	IC DRIVER HI SIDE RECHARGE 8SOIC	Obsolete	High-Side	Single	1	N-Channel MOSFET	5 V ~ 20 V	1.4V, 3V	1.5A, 1.5A	Inverting	150V	200ns, 100ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR2304	Infineon Technologies	IC DRIVER HALF-BRIDGE 8-DIP	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600V	200ns, 100ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IR2304PBF	Infineon Technologies	IC DRIVER HALF-BRIDGE 8-DIP	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600V	200ns, 100ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IR2304SPBF	Infineon Technologies	IC DRIVER HALF BRIDGE 8-SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600V	200ns, 100ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR2304STRPBF	Infineon Technologies	IC DVR HALF BRIDGE 8-SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600V	200ns, 100ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR25601STRPBF	Infineon Technologies	IC HALF BRIDGE DRIVER 8SOIC	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.3V	60mA, 130mA	Non-Inverting	600V	200ns, 100ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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