1. Casa
  2. Prodotti
  3. Circuiti integrati (CI)
  4. Memoria
  5. Prodotti

Produttori per Memoria

Adesto Technologies
AKM Semiconductor
Alliance Memory, Inc.
Cypress Semiconductor
Everspin Technologies, Inc.
Fremont Micro Devices
Fujitsu Electronics America, Inc.
GigaDevice
Honeywell Aerospace
Insignis Technology Corporation
Integrated Device Technology, Inc.
Integrated Silicon Solution, Inc. (ISSI)
Intel
Intersil (Renesas Electronics America)
Macronix
Maxim Integrated
Microchip Technology
Micron Technology
Nuvoton Technology Corporation America
NXP Semiconductors
ON Semiconductor
Panasonic
Parallax, Inc.
Qimonda
Renesas Electronics America
ROHM Semiconductor
SanDisk
Sharp Microelectronics
ABLIC U.S.A. Inc.
Socle Technology Corporation
STMicroelectronics
Swissbit
Texas Instruments
Toshiba Memory America, Inc.
Viking Technology
Winbond Electronics
Numero di parte Produttore / Marca Breve descrizione Stato parteTipo di memoriaFormato di memoriaTecnologiaDimensione della memoriaFrequenza di clockScrivi il tempo di ciclo - Parola, PaginaTempo di accessoInterfaccia di memoriaTensione - Fornituratemperatura di esercizioTipo di montaggioPacchetto / casoPacchetto dispositivo fornitore
MT53B512M64D4PV-053 WT ES:C TR
 Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1866MHz
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1.1V-30°C ~ 85°C (TC)
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MT53B512M64D4PV-053 WT:C TR
 Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1866MHz
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1.1V-30°C ~ 85°C (TC)
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MT53B512M64D4PV-062 WT ES:C TR
 Micron Technology Inc. IC DRAM 32G 1600MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1600MHz
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1.1V-30°C ~ 85°C (TC)
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MT53B512M64D4PV-062 WT:C TR
 Micron Technology Inc. IC DRAM 32G 1600MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1600MHz
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1.1V-30°C ~ 85°C (TC)
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PC28F256P30B2E
 Micron Technology Inc. IC FLASH 256M PARALLEL 52MHZ ObsoleteNon-VolatileFLASHFLASH - NOR256Mb (16M x 16)52MHz100ns100nsParallel1.7 V ~ 2 V-40°C ~ 85°C (TA)
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PC28F256P33B2E
 Micron Technology Inc. IC FLASH 256M PARALLEL 52MHZ ObsoleteNon-VolatileFLASHFLASH - NOR256Mb (16M x 16)52MHz85ns85nsParallel2.3 V ~ 3.6 V-40°C ~ 85°C (TC)
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RC28F128J3F75G
 Micron Technology Inc. IC FLASH 128M PARALLEL 64EASYBGA ObsoleteNon-VolatileFLASHFLASH - NOR128Mb (16M x 8, 8M x 16)
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75ns75nsParallel2.7 V ~ 3.6 V-40°C ~ 85°C (TA)Surface Mount64-TBGA64-EasyBGA (10x13)
RC28F256P30T2E
 Micron Technology Inc. IC FLASH 256M PARALLEL 52MHZ ObsoleteNon-VolatileFLASHFLASH - NOR256Mb (16M x 16)52MHz100ns100nsParallel1.7 V ~ 2 V-40°C ~ 85°C (TA)Surface Mount64-TBGA64-EasyBGA (10x13)
EDF8164A3PD-GD-F-D
 Micron Technology Inc. IC DRAM 8G PARALLEL 800MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR38Gb (128M x 64)800MHz
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Parallel1.14 V ~ 1.95 V-30°C ~ 85°C (TC)
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MT28HL04GABB1EPG-0GCT
 Micron Technology Inc. NOR FLASH 256MX16 PLASTIC 3.3V Active
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MT28HL16GJBA3ERK-0SCT
 Micron Technology Inc. NOR FLASH 512MX32 PLASTIC 3.3V Obsolete
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MT28HL16GJBB3ERK-0SCT
 Micron Technology Inc. NOR FLASH 512MX32 PLASTIC 3.3V Active
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MT28HL32GQBB3ERK-0GCT
 Micron Technology Inc. NOR FLASH 1GX32 PLASTIC PBF FBGA Active
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MT28HL32GQBB3ERK-0SCT
 Micron Technology Inc. NOR FLASH 1GX32 PLASTIC 3.3V Active
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MT53B256M64D2NL-062 XT ES:C
 Micron Technology Inc. IC DRAM 16G 1600MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (256M x 64)1600MHz
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1.1V-30°C ~ 105°C (TC)
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MT53B256M64D2NL-062 XT:B TR
 Micron Technology Inc. IC DRAM 16G 1600MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (256M x 64)1600MHz
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1.1V-30°C ~ 105°C (TC)
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MT53B256M64D2NL-062 XT:C
 Micron Technology Inc. IC DRAM 16G 1600MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR416Gb (256M x 64)1600MHz
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1.1V-30°C ~ 105°C (TC)
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MT53B2DANL-DC
 Micron Technology Inc. LPDDR4 16G 256MX64 FBGA DDP ObsoleteVolatileDRAMSDRAM - Mobile LPDDR4
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MT29E1HT08ELHBBG1-3ES:B TR
 Micron Technology Inc. IC FLASH 1.5T PARALLEL 272VBGA ActiveNon-VolatileFLASHFLASH - NAND1.5Tb (192G x 8)
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29C1G12MAAIYAMR-5 AIT TR
 Micron Technology Inc. IC FLASH RAM 1G PARALLEL 200MHZ ActiveNon-VolatileFLASH, RAMFLASH - NAND, Mobile LPDRAM1Gb (128M x 8)(NAND), 512M (16M x 32)(LPDRAM)200MHz
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Parallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)
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MT29C1G12MAAJVAKC-5 IT TR
 Micron Technology Inc. MCP 64MX16/32MX16 PLASTIC GREEN Obsolete
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MT29C2DBGM-DC TR
 Micron Technology Inc. MASSFLASH/LPDDR2 8G Active
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MT29C3DAMF-DC TR
 Micron Technology Inc. MASSFLASH/LPDDR2 8G Active
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MT29C3DBAN-DC TR
 Micron Technology Inc. MASSFLASH/LPDDR2 12G Active
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MT29C4G48MAYBBAHK-48 AIT TR
 Micron Technology Inc. IC FLASH RAM 4G PARALLEL 208MHZ ActiveNon-VolatileFLASH, RAMFLASH - NAND, Mobile LPDRAM4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDRAM)208MHz
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Parallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)
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MT29C4G48MAZBBAKB-48 IT TR
 Micron Technology Inc. IC FLASH RAM 4G PARALLEL 208MHZ ActiveNon-VolatileFLASH, RAMFLASH - NAND, Mobile LPDRAM4Gb (256M x 16)(NAND), 2G (128M x 16)(LPDRAM)208MHz
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Parallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)
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MT29C4G96MAZBBCJV-48 IT TR
 Micron Technology Inc. IC FLASH RAM 4G PARALLEL 208MHZ ObsoleteNon-VolatileFLASH, RAMFLASH - NAND, Mobile LPDRAM4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)208MHz
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Parallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)
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MT29C8G96MAZBBDKD-48 IT TR
 Micron Technology Inc. IC FLASH RAM 8G PARALLEL 208MHZ ObsoleteNon-VolatileFLASH, RAMFLASH - NAND, Mobile LPDRAM8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)208MHz
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Parallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)
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MT29E1HT08EMHBBJ4-3:B TR
 Micron Technology Inc. IC FLASH 1.5T PARALLEL 132VBGA ActiveNon-VolatileFLASHFLASH - NAND1.5Tb (192G x 8)
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1HT08EMHBBJ4-3ES:B TR
 Micron Technology Inc. IC FLASH 1.5T PARALLEL 132VBGA ActiveNon-VolatileFLASHFLASH - NAND1.5Tb (192G x 8)
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1T08CMHBBJ4-3:B TR
 Micron Technology Inc. IC FLASH 1T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1T08CMHBBJ4-3ES:B TR
 Micron Technology Inc. IC FLASH 1T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1T08CPCBBH8-6:B TR
 Micron Technology Inc. IC FLASH 1T PARALLEL 167MHZ ObsoleteNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)167MHz
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1T08CUCBBH8-6:B TR
 Micron Technology Inc. IC FLASH 1T PARALLEL 167MHZ ObsoleteNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)167MHz
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1T208ECHBBJ4-3:B TR
 Micron Technology Inc. IC FLASH 1.125T PARALLEL 132VBGA ActiveNon-VolatileFLASHFLASH - NAND1.125Tb (144G x 8)
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E1T208ECHBBJ4-3ES:B TR
 Micron Technology Inc. IC FLASH 1.125T PARALLEL 132VBGA ActiveNon-VolatileFLASHFLASH - NAND1.125Tb (144G x 8)
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E256G08CECBBH6-6:B TR
 Micron Technology Inc. IC FLASH 256G PARALLEL 167MHZ ObsoleteNon-VolatileFLASHFLASH - NAND256Gb (32G x 8)167MHz
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E2T08CTCBBJ7-6:B TR
 Micron Technology Inc. IC FLASH 2T PARALLEL 167MHZ ObsoleteNon-VolatileFLASHFLASH - NAND2Tb (256G x 8)167MHz
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E2T08CUHBBM4-3:B TR
 Micron Technology Inc. IC FLASH 2T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND2Tb (256G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E2T08CUHBBM4-3ES:B TR
 Micron Technology Inc. IC FLASH 2T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND2Tb (256G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E384G08EBHBBJ4-3:B TR
 Micron Technology Inc. IC FLASH 384G PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND384Gb (48G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E384G08EBHBBJ4-3ES:B TR
 Micron Technology Inc. IC FLASH 384G PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND384Gb (48G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E3T08EUHBBM4-3:B TR
 Micron Technology Inc. IC FLASH 3T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND3Tb (384G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E3T08EUHBBM4-3ES:B TR
 Micron Technology Inc. IC FLASH 3T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND3Tb (384G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E4T08CTHBBM5-3:B TR
 Micron Technology Inc. IC FLASH 4T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND4Tb (512G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E4T08CTHBBM5-3ES:B TR
 Micron Technology Inc. IC FLASH 4T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND4Tb (512G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E512G08CEHBBJ4-3:B TR
 Micron Technology Inc. IC FLASH 512G PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E512G08CEHBBJ4-3ES:B TR
 Micron Technology Inc. IC FLASH 512G PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)333MHz
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Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E512G08CKCBBH7-6:B TR
 Micron Technology Inc. IC FLASH 512G PARALLEL 167MHZ ObsoleteNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)167MHz
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29E512G08CMCBBH7-6:B TR
 Micron Technology Inc. IC FLASH 512G PARALLEL 167MHZ ObsoleteNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)167MHz
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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