Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - TSPB15U45S S1G TSPB15U50S S1G BYM36E-TAP BYT78-TAP - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
TSPB15U45S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 15A SMPC4.0	Active	Schottky	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB15U50S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 15A SMPC4.0	Active	Schottky	50V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
BYM36E-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 2.9A SOD64	Active	Avalanche	1000V	2.9A	1.78V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 1000V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYT78-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 3A SOD64	Active	Avalanche	1000V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
ESH3DHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 200V	70pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
TSN525M60 S3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 25A 8PDFN	Active	Schottky	60V	25A	630mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	-55°C ~ 150°C
BYW86TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 3A SOD64	Active	Avalanche	1000V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	7.5µs	1µA @ 800V	60pF @ 4V, 1MHz	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
ES3C-13-F	Diodes Incorporated	DIODE GEN PURP 150V 3A SMC	Active	Standard	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
V15P6-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 4.8A TO277A	Active	Schottky	60V	4.8A	620mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.6mA @ 60V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
TSPB15U100S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 15A SMPC4.0	Active	Schottky	100V	15A	700mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
V20PWM45HM3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 20A SLIMDPAK	Active	Schottky	45V	20A	660mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 45V	3100pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
GI750-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 6A P600	Active	Standard	50V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 50V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
BYW178-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 3A SOD64	Active	Avalanche	800V	3A	1.9V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 800V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
TSN525M60HS3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 25A 8PDFN	Active	Schottky	60V	25A	630mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	-55°C ~ 150°C
TSPB10U45S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 10A SMPC4.0	Active	Schottky	45V	10A	460mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
NRVBA1H100T3G	ON Semiconductor	DIODE SCHOTTKY 100V 1A SMA	Active	Schottky	100V	1A	760mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
BYV28-100-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 3.5A SOD64	Active	Avalanche	100V	3.5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 100V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
RB075BM40SFHTL	Rohm Semiconductor	SCHOTTKY BARRIER DIODE	Active	Schottky	40V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	15.2ns	5µA @ 40V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
VS-15EVL06HM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE 600V SLIMDPAK	Active	Standard	600V	15A	1.35V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
RFN10BM3STL	Rohm Semiconductor	DIODE GEN PURP 350V 10A TO252	Active	Standard	350V	10A	1.5V @ 10A	Standard Recovery >500ns, > 200mA (Io)	30ns	10µA @ 350V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
RD0106T-H	ON Semiconductor	DIODE GEN PURP 600V 1A TP	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP	150°C (Max)
V10WM100-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 100V DPAK	Active	Schottky	100V	10A	750mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 100V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 150°C
RB075BM40STL	Rohm Semiconductor	DIODE SCHOTTKY 40V 5A TO252	Active	Schottky	40V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 40V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
RF505BM6SFHTL	Rohm Semiconductor	SUPER FAST RECOVERY DIODES	Active	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
STTH15RQ06G-TR	STMicroelectronics	DIODE GEN PURP 600V 15A D2PAK	Active	Standard	600V	15A	2.95V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
V35PW60HM3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 35A SLIMDPAK	Active	Schottky	60V	35A	720mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 600V	3600pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 150°C
SURHS8160T3G	ON Semiconductor	DIODE GEN PURP 600V 1A SMB	Active	Standard	600V	1A	2.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
BYV10-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220AC	Active	Standard	600V	10A	2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYV10X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220-2	Active	Standard	600V	10A	2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	175°C (Max)
VBT3080S-E3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 80V TO-263AB	Active	Schottky	80V	30A	950mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 80V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
BYC8-600P,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STTH30RQ06G-TR	STMicroelectronics	DIODE GEN PURP 600V 30A D2PAK	Active	Standard	600V	30A	2.95V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	40µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BYC8X-600P,127	WeEn Semiconductors	DIODE GEN PURP 600V 8A TO220F	Active	Standard	600V	8A	1.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	175°C (Max)
FERD20H100SFP	STMicroelectronics	DIODE RECT 100V 20A TO220FP	Active	FERD (Field Effect Rectifier Diode)	100V	20A	705mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	140µA @ 100V	-	Through Hole	TO-220-3 Full Pack	TO-220FP	175°C (Max)
FERD20H100STS	STMicroelectronics	DIODE RECT 100V 20A TO220AB	Active	FERD (Field Effect Rectifier Diode)	100V	20A	705mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	140µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	175°C (Max)
HERAF808G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 8A ITO220AC	Active	Standard	1000V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
BYV29FX-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 9A TO220F	Active	Standard	600V	9A	1.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYC10DX-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 10A TO220F	Active	Standard	500V	10A	2.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	200µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
SBRD8835LG-VF01	ON Semiconductor	DIODE SCHOTTKY 35V 8A DPAK	Active	Schottky	35V	8A	510mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.4mA @ 35V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-65°C ~ 150°C
FERD20H100SH	STMicroelectronics	DIODE RECT 100V 20A IPAK	Active	FERD (Field Effect Rectifier Diode)	100V	20A	705mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	140µA @ 100V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	175°C (Max)
UGF1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AB	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 600V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
BYV29-400,127	WeEn Semiconductors	DIODE GEN PURP 400V 9A TO220AC	Active	Standard	400V	9A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 400V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
QH05BZ600	Power Integrations	DIODE GEN PURP 600V 5A TO263AB	Active	Standard	600V	5A	3.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	10ns	250µA @ 600V	17pF @ 10V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	150°C (Max)
STTH30RQ06GY-TR	STMicroelectronics	DIODE GEN PURP 600V 30A D2PAK	Active	Standard	600V	30A	2.95V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	40µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
FERD30H100STS	STMicroelectronics	DIODE RECT 100V 30A TO220AB	Active	FERD (Field Effect Rectifier Diode)	100V	30A	745mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	175°C (Max)
FERD30H100SH	STMicroelectronics	DIODE RECT 100V 30A IPAK	Active	FERD (Field Effect Rectifier Diode)	100V	30A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	175°C (Max)
SFF1005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A ITO220AB	Active	Standard	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFAF1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AC	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A ITO220AB	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
TST30L150CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 15A TO220AB	Active	Schottky	150V	15A	920mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C

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